Heteroepitaxial growth of In In[subscript 0.30]Ga[subscript 0.70]As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. Citation Kohen, David, et al. “Heteroepitaxial Growth of In[subscript 0.30]Ga[subscript 0.70] As High-Electron Mobility Transistor on 200 Mm Silicon Substrate Using Metamorphic Graded Buffer.” AIP Advances, vol. 6, no. 8, Aug. 2016, p. 085106. As Published http://dx.doi.org/10.1063/1.4961025 Publisher American Institute of Physics (AIP) Version Final published version Citable link http://hdl.handle.net/1721.1/112299 Terms of Use Creative Commons Attribution 4.0 International License Detailed Terms http://creativecommons.org/licenses/by/4.0/