Aalborg Universitet Investigation on the degradation indicators of short-circuit tests in 1.2kV SiC MOSFET power modules Du, He; Reigosa, Paula Diaz; Iannuzzo, Francesco; Ceccarelli, Lorenzo Published in: Microelectronics Reliability DOI (link to publication from Publisher): 10.1016/j.microrel.2018.06.039 Creative Commons License CC BY-NC-ND 4.0 Publication date: 2018 Document Version Accepted author manuscript, peer reviewed version Link to publication from Aalborg University Citation for published version (APA): Du, H., Reigosa, P. D., Iannuzzo, F., & Ceccarelli, L. (2018). Investigation on the degradation indicators of short- circuit tests in 1.2kV SiC MOSFET power modules. Microelectronics Reliability, 88-90, 661-665. https://doi.org/10.1016/j.microrel.2018.06.039 General rights Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights. ? Users may download and print one copy of any publication from the public portal for the purpose of private study or research. ? You may not further distribute the material or use it for any profit-making activity or commercial gain ? You may freely distribute the URL identifying the publication in the public portal ? Take down policy If you believe that this document breaches copyright please contact us at vbn@aub.aau.dk providing details, and we will remove access to the work immediately and investigate your claim.