A comb-gate silicon tunneling field effect transistor with improved on-state current Zhan ZHAN, QianQian HUANG, Ru HUANG * , WenZhe JIANG and YangYuan WANG Citation: SCIENCE CHINA Information Sciences 56, 072401 (2013); doi: 10.1007/s11432-012-4713-5 View online: https://engine.scichina.com/doi/10.1007/s11432-012-4713-5 View Table of Contents: https://engine.scichina.com/publisher/scp/journal/SCIS/56/7 Published by the Science China Press Articles you may be interested in Analytical current model of tunneling field-effect transistor considering the impacts of both gate and drain voltages on tunneling SCIENCE CHINA Information Sciences 58, 022402 (2015); Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors SCIENCE CHINA Information Sciences 63, 229403 (2020); A controlled-NOT gate in a chain of qubits embedded in a spin field-effect transistor and its process tomography European Physical Journal B 86, 393 (2013); Organic field-effect transistor with octadecyltrichlorosilane (OTS) self-assembled monolayers on gate oxide: effect of OTS quality European Physical Journal AP(Applied Physics) 56, 34106 (2011); InGaP/GaAs camel-like gate field-effect transistor with InGaAs pseudomorphic doped-channel layer European Physical Journal AP(Applied Physics) 48, 20303 (2009);