Abstract—In this work, an organic compound 5,10,15,20- Tetrakis(3,5-di-tertbutylphenyl)porphyrinatocopper(II) (TDTBPPCu) is studied as an active material for thin film electronic devices. To investigate the electrical properties of TDTBPPCu, junction of TDTBPPCu with heavily doped n-Si and Al is fabricated. TDTBPPCu film was sandwiched between Al and n-Si electrodes. Various electrical parameters of TDTBPPCu are determined. The current-voltage characteristics of the junction are nonlinear, asymmetric and show rectification behavior, which gives the clue of formation of depletion region. This behavior indicates the potential of TDTBPPCu for electronics applications. The current-voltage and capacitance-voltage techniques are used to find the different electronic parameters. Keywords—P-type, organic semiconductor, Electrical characteristics I. INTRODUCTION HE motivation of using organic materials in electronic devices arose from their easily tunable properties, low cost, low temperature processing, reel-to-reel printing, and compatibility with flexible substrates [1-3]. Organic materials have the ability to be modified in such a way that could directly impact their chemical properties [4]. These materials provide a diversity of interesting features, making the realization of organic devices with advantages over the conventional inorganic technology [5-7]. The knowledge of processes like injection, transport and recombination is required to understand the electronic devices. Metal/organic junctions are the basic structures to investigate these processes. By studying electrical characteristics of these junctions, we can extract the parameters that control the device performance. Many authors [8-11] investigated the properties of porphyrin derivatives. Their results show that porphyrins have great potential for electronics applications. However, a stable junction could not be fabricated successfully from organic semiconductors because p and n-type doping cannot be separately introduced to adjacent layers. This problem can be overcome by attempting the fabrication of organic-inorganic semiconductor hybrid junctions. Hybrid organic-inorganic structures present an interesting alternative to all inorganic Zubair Ahmad and M H. Sayyad are with the Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi-23460, Pakistan M. Yaseen is with Department of Chemistry, University of Gujrat, Pakistan M. Ali is with the Chairman BISE, Bahawalpur, Pakistan and all organic electronic devices, allowing association of stability and efficiency of inorganic semiconductors with tunability of band level energies of organic semiconductors. Efficient hetero-junction can be realized by this approach. In the present work, an organic semiconductor TDTBPPCu has been investigated to explore its potential for electronics applications. An inorganic semiconductor substrate is used for growing organic molecules. II. EXPERIMENTAL PROCEDURE The organic semiconductor 5,10,15,20-Tetrakis(3’,5’-di- tert-butylphenyl) porphyrinatocopper(ll) (TDTBPPCu) and heavily doped n-silicon<110> wafer are used for fabrication of the junction. The molecular structure of TDTBPPCu is shown in Figure 1. The silicon wafer was cleaned using acetone in ultrasonic cleaner at room temperature for 10 min. Then the substrate was plasma cleaned for 5 min. On the polished surface of n-Si, TDTBPPCu was deposited by spin coating. Thickness of TDTBPPCu was 150 nm. The contacts on TDTBPPCu and back side of n-Si were made by Al. The area of each contact was 2.58x10 -3 cm 2 . The deposition was done at growth rate of 0.1 nms -1 under 5.5x10 -6 mbar chamber pressure. Figure 2 shows the schematic diagram of Al/TDTBPPCu/n-Si/Al device. Current-voltage and capacitance-voltage characteristics were performed by current-voltage analyzer MDC CSM/Win Systems-Quiet CHUCK of Material Corporation. Fig. 1 Molecular structure of TDTBPPCu Investigation of 5,10,15,20-Tetrakis(3’,5’-Di- Tert-Butylphenyl)Porphyrinatocopper(II) for Electronics Applications Zubair Ahmad, M. H. Sayyad, M. Yaseen, M. Ali T World Academy of Science, Engineering and Technology International Journal of Materials and Metallurgical Engineering Vol:5, No:4, 2011 380 International Scholarly and Scientific Research & Innovation 5(4) 2011 scholar.waset.org/1307-6892/5234 International Science Index, Materials and Metallurgical Engineering Vol:5, No:4, 2011 waset.org/Publication/5234