Lasing modes in equilateral-triangular laser cavities
H. C. Chang, G. Kioseoglou, E. H. Lee, J. Haetty, M. H. Na, Y. Xuan, H. Luo,* and A. Petrou
Department of Physics, State University of New York at Buffalo, Buffalo, New York 14260
A. N. Cartwright
Department of Electrical Engineering, State University of New York at Buffalo, Buffalo, New York 14260
Received 26 August 1999; published 16 June 2000
We report the study of lasing modes in broad-area, equilateral-triangular laser cavities. An alternative
approach is proposed to study optical modes in equilateral triangular cavities in an analytical form. The modes
were obtained by examining the simplest optical paths inside the cavity, which yields the final solution with the
boundary conditions. The cavities can be fabricated from semiconductor heterostructures grown on 111-
oriented substrates, which can be easily cleaved into equilateral triangular shapes. Such a design takes advan-
tage of total internal reflection at the cleaved facets of the cavity for circulating modes. Experimental results
are obtained from cavities fabricated from a superlattice structure of In
0.13
Ga
0.87
As/GaAs grown on a 111
GaAs substrate.
PACS numbers: 42.55.Px, 42.60.Da, 42.60.Jf
I. INTRODUCTION
Cleaved cavity semiconductor lasers are the simplest kind
of laser structure because they are easy to fabricate and the
cleaved facets have the highest degree of perfection. Thus
they are widely used in commercial applications. Because of
diverse performance needs, laser cavities of various shapes
and dimensions have been intensely studied, including sur-
face emitting lasers 1, microdisk lasers 2, micro-arc-ring
lasers 3, triangular, L- and U-shaped ridge lasers 4–6,
bow-tie lasers 7, and so on.
The purpose of this study is to investigate a cavity of
triangular shape, taking advantage of the crystalline symme-
tries of the samples, namely those grown on 111 substrates,
including GaAs- and GaN-based structures 8,9. From a ma-
terial point of view, samples grown on 111-oriented sub-
strates have shown excellent characteristics in the standard
stripe laser geometry, which yield thresholds as low as 87
A/cm
2
10.
Cavities of triangular shapes have been fabricated to ex-
plore possible advantages of such laser structures. However,
the mode structure inside a triangular cavity has not been
theoretically analyzed and used in actual laser designs. The
focus of this paper is the optical modes in an equilateral
triangular cavity. An analysis of the modes is needed for
understanding the properties of lasing characteristics in this
configuration. Although there have been studies on cavities
in this configuration, the results were qualitatively inter-
preted 11,12. The lack of calculated results also led to
less-than-optimum designs in the past. In Ref. 11, for in-
stance, waveguides are created as a part of the cavity for
extracting the light beam from the cavity. Such waveguides,
however, are created at the corners of the cavity where the
light intensity is the lowest, as indicated by our calculations
of normal modes. It should be pointed out that the cavities
studied here are different from the ring lasers having an
etched ridge along the side of the triangle 4.
Specifically, the configuration addressed here involves an
equilateral triangular laser cavity in which the active medium
covers the whole area of the triangle, cleaved from samples
grown on 111 substrates. There are three cleavage planes
perpendicular to 111, namely, (101
¯
), (11
¯
0), and (011
¯
),
which form equilateral triangles. The cavities reported here
have each side of the triangles equal to or greater than 75
m. Thus the optical modes can be calculated with the clas-
sical treatment of light waves for our purpose.
II. CAVITY NORMAL MODES
We will first examine the optical modes in an equilateral
triangular cavity, whose electrical and magnetic component
obeys the Maxwell equations in the well-known form
2
+ k
2
=0, 1
after the time variable is separated out 13, where can be
either the electric or magnetic field. The problem of this
second-order partial differential equation in an equilateral tri-
angle was treated a long time ago and refined subsequently
14. In previous treatments, two wave vectors of the two-
dimensional problem, k
1
and k
2
, are parallel to two sides of
the triangle thus not orthogonal to each other and periodic
boundary conditions were used. Because the two wave vec-
tors are not linearly independent, the results have terms in-
volving k
1
• k
2
. Such terms obscure the physical picture of
normal modes inside the resonant cavity. In order to analyze
lasing action in such triangular cavities, it is critical to find
normal modes having linearly independent wave vectors. In
order to find solutions with two wave vectors perpendicular
to each other, the coordinate system shown in Fig. 1 was
used to calculate the two-dimensional problem the x - y
plane. The z direction, which is taken as the growth direc-
tion, is identical to other edge-emitting semiconductor lasers, *Corresponding author.
PHYSICAL REVIEW A, VOLUME 62, 013816
1050-2947/2000/621/0138166/$15.00 ©2000 The American Physical Society 62 013816-1