27 Computational and Experimental Research in Materials and Renewable Energy (CERiMRE) Volume 3, Issue 1, page 27-37 Submitted : January 25, 2020 Accepted : April 5, 2020 Online : May 2, 2020 doi : 10.19184/cerimre.v3i1.26416 Study of J-V Characteristics of Microcrystalline Silicon Solar Cell on The Structure of P-I-N Homojunction Yuningtyas Nely Kusuma Dewi 1 , Endhah Purwandari 2,a , Khoirul Anwar 2 , Misto 2 1 Department of Physics, Faculty of Science and Data Analytics, Institut Teknologi Sepuluh Nopember, Surabaya 60111, East Java, Indonesia 2 Departmen of Physics, Faculty of Mathematics and Natural Sciences, Universitas Jember, Jember 68121, East Java, Indonesia a endhah.fmipa@unej.ac.id Abstract. Microcrystalline silicon (μc-Si) is a silicon semiconductor material with a crystalline structure in the amorphous phase. Here, the transport phenomenon in this phase has been modeled to produce charge carrier distribution profile and current density-voltage characteristics. The calculations were obtained by solving Poisson and Continuity equations on crystal and amorphous materials which are modeled in one-dimensional p-i-n homojunction, using finite element method. The simulation results of the charge carrier distribution profile show that the highest electron concentration in the n-layer of 10 18 cm -1 , and the highest hole concentration in the p-layer of 10 18 cm -1 . The result current density-voltage (J- V) characteristics curve show that the open circuitt voltage of 0,6 volts and short-circuit current density of 26.4 mA/cm. The energy conversion efficiency of 9.02% with a fill factor of 0.569. Keywords: Silicon, solar cell, amorphous, microcrystalline, polycrystal, monocrystal, short circuit current density, open voltage Introduction A solar cell is a device that converts solar energy into electrical energy directly. Solar cells are made of semiconductor material from the result of covalent bonding between material elements. One example of semiconductor materials that have been applied as production materials for transistor electronic devices, diodes, and solar cells is silicon [1]. Silicon is one of the basic semiconductor materials of IV groups which is composed of atoms with a specific structure. As material from solar cell devices, silicon can be used to some structures, that is amorphous, microcrystal, polycrystal, and monocrystal. Microcrystal silicon (μc-Si) is a silicon semiconductor material with a crystalline structure in the amorphous phase [2]. In 2004, Klein et al. reported the results of experiments on the growth microcrystal silicon solar cell with Hot Wire Chemical Vapor Deposition (HWCVD) techniques with a conversion efficiency of 9.4%, open-circuit voltage of 0.58 V, and short circuit current density of 23.3 mA/cm 2 [3]. To support the research without a large cost, a simulation of hydrogenated microcrystal silicon (μc-Si: H) solar cell which has been done by Lin et al. in 2013 used the Centaurus TCAD simulator [4]. That simulation conversion efficiency of 9.7%, the open-circuit voltage of 0.523 V, and short circuit current density of 26.8 mA/cm 2 [5]. The effect of i-layer thickness on the characteristics of current-voltage in p-i-n junction of silicon crystalline based solar cell has been reported by Herawati [5]. In 2016, Sholeha has modeled the transport phenomena in hydrogenated amorphous silicon (a-Si: H) solar cell devices by