Effect of Si content on electrophysical properties of Si-polymer
composite varistors
M. Ghafouri
a, *
, M. Parhizkar
a
, H. Bidadi
a
, S. Mohammadi Aref
a
, A. Olad
b
a
University of Tabriz, Faculty of Physics, Emam St., Tabriz, Iran
b
University of Tabriz, Faculty of Chemistry, Tabriz, Iran
highlights
A new economical composite varistor made of Si, PANI and PE has been introduced.
We could reach lower breakdown voltages by increasing Si content.
As Si content increases, nonlinearity of the varistor increase.
They have low hysteresis loop with respect to other polymer-based varistors.
Hysteresis of the varistors increases with increasing Si content.
article info
Article history:
Received 25 September 2013
Received in revised form
11 June 2014
Accepted 22 June 2014
Available online xxx
Keywords:
Composite materials
Hot working
Electrical characterisation
Electrical properties
abstract
Electrophysical properties of Si-polymer composite varistors, which were prepared using hot press
method, have been investigated. Research on (IeV) characteristics of samples shows that by Si content
exceeding 65% of the whole, samples have varistor behavior with nonlinear coefficient of about 10.
Varistor breakdown voltage tends to become low in reaction to increase in Si content. Potential barriers
of samples have also been investigated. The results show that increasing Si content decreases their
potential barrier. These samples show a low hysteresis compared to other semiconductor-polymer
composite varistors.
© 2014 Elsevier B.V. All rights reserved.
1. Introduction
Rapid growth of micro and sub-micro electrical and electronical
equipment has resulted in growing concern about how to protect
them against surges and over voltages. An appropriate strategy to
reach this goal is to hire some voltage stabilizers with proper
nonlinear (IeV) characteristics, which are called “varistors”. Some
metal oxide ceramics such as SnO
2
, SiC and ZnO have this nonlin-
earity and are widely used as surge protectors because of their high
nonlinearity near breakdown voltage. However, researchers are
mainly interested in ZnO-based varistors since they are highly
capable of absorbing surge energies in addition to qualified
nonlinear (IeV) characteristics [1e3]. Normally, a varistor is sub-
jected to a voltage lower than its breakdown voltage. When
overvoltage occurs, the varistor becomes highly conductive and as
voltage drops to normal case, the conductivity returns nearly back
to its initial state. This behavior which is related to varistor
microstructure is controlled by the electronic defects in poly-
crystalline zinc oxide ceramics which are developed through the
addition of different oxide additives, e.g., Bi
2
O
3
, CoO, MnO, TiO
2
,
Sb
2
O
3
, etc. Typically, microstructure of ZnO varistors consists of
three phases: ZnO grains, spinel phase and Bi-rich inter-granular
phase [4e6]. Beside additives, varistor property is directly affected
by preparation method and sintering process [6e9]. It is note-
worthy that the number of grains between two electrodes and
varistor thickness affect the breakdown voltage in such a way that
low voltage varistors can be constructed either by decreasing the
thickness of the sample or by increasing the size of ZnO grains.
For ZnO varistors, it has been shown that the step voltage per
each grain boundary is about 3e3.6 V/grain. This amount is not
affected by amount of additives, their nature or their composition
[10,11].
* Corresponding author. Tel.: þ98 914 108 8700.
E-mail address: ghafouri.sar@gmail.com (M. Ghafouri).
Contents lists available at ScienceDirect
Materials Chemistry and Physics
journal homepage: www.elsevier.com/locate/matchemphys
http://dx.doi.org/10.1016/j.matchemphys.2014.06.066
0254-0584/© 2014 Elsevier B.V. All rights reserved.
Materials Chemistry and Physics xxx (2014) 1e6
Please cite this article in press as: M. Ghafouri, et al., Effect of Si content on electrophysical properties of Si-polymer composite varistors,
Materials Chemistry and Physics (2014), http://dx.doi.org/10.1016/j.matchemphys.2014.06.066