This content has been downloaded from IOPscience. Please scroll down to see the full text. Download details: IP Address: 80.82.77.83 This content was downloaded on 23/05/2017 at 08:10 Please note that terms and conditions apply. High-performance self-aligned graphene transistors fabricated using contamination- and defect-free process View the table of contents for this issue, or go to the journal homepage for more 2016 Jpn. J. Appl. Phys. 55 06GF11 (http://iopscience.iop.org/1347-4065/55/6S1/06GF11) Home Search Collections Journals About Contact us My IOPscience You may also be interested in: Self-aligned graphene field-effect transistors on SiC (0001) substrates with self-oxidized gate dielectric Li Jia, Yu Cui, Wang Li et al. Resistance analysis and device design guideline for graphene RF transistors Seul Ki Hong, Sang Chul Jeon, Wan Sik Hwang et al. Microwave characterization of graphene field effect transistors on lithium niobate ferroelectric substrates Samina Bidmeshkipour, M Fathipour, Y Abdi et al. Wafer-Scale Gigahertz Graphene Field Effect Transistors on SiC Substrates Pan Hong-Liang, Jin Zhi, Ma Peng et al. Chemical Vapour Deposition Graphene Radio-Frequency Field-Effect Transistors Ma Peng, Jin Zhi, Guo Jian-Nan et al. Monte Carlo Simulations of High-Carrier-Velocity Acceleration in Graphene Field-Effect Transistors by Local Channel Width Modulation Aizuddin Mohamad, Naoki Harada and Yuji Awano Investigation of channel mobility in AlGaN/GaN high-electron-mobility transistors Sung-Jae Chang, Hee-Sung Kang, Jae-Hoon Lee et al. Short channel effects in graphene-based field effect transistors targeting radio-frequency applications Pedro C Feijoo, David Jiménez and Xavier Cartoixà