Japanese Journal of Applied Physics Studies of Switching Kinetics in Ferroelectric Thin Films To cite this article: Anquan Jiang et al 2003 Jpn. J. Appl. Phys. 42 6973 View the article online for updates and enhancements. Related content Domain Switching Kinetics of Lead Zirconate Titinate Thin Films Song-Min Nam, Young-Bae Kil, Satoshi Wada et al. - Dielectric Degradation and Reversible Domain Motion in Ferroelectric Thin Films Evidenced by Double-Butterfly Capacitance–Voltage Loops with Sweeping Times from 500 ns to 1 s An-Quan Jiang and Ting-Ao Tang - Nonswitching Layer Model for Voltage Shift Phenomena in Heteroepitaxial Barium Titanate Thin Films Kazuhide Abe, Naoko Yanase, Takaaki Yasumoto et al. - Recent citations Investigation of fatigue behavior of Pb(Zr 0.45 Ti 0.55 )O 3 thin films under asymmetric polarization switching Hui Zhu et al - Effect of temperature on the electrical properties of a metal-ferroelectric (SrBi 2 Ta 2 O 9 )-insulator (HfTaO)-silicon capacitor Y Q Chen et al - Effect of manganese doping on the size effect of lead zirconate titanate thin films and the extrinsic nature of 'dead layers' X J Lou and J Wang - This content was downloaded from IP address 207.241.231.81 on 25/03/2020 at 21:32