Sensors and Actuators B 137 (2009) 370–378
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Sensors and Actuators B: Chemical
journal homepage: www.elsevier.com/locate/snb
Effect of sputtering pressure on pulsed-DC sputtered iridium oxide films
S. Negi
∗
, R. Bhandari, L. Rieth, F. Solzbacher
Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, UT, USA
article info
Article history:
Received 29 September 2008
Received in revised form 29 October 2008
Accepted 10 November 2008
Available online 24 November 2008
Keywords:
Iridium oxide
Sputtering
Charge storage capacity
Neuroprostheses
abstract
This paper reports the influence of the sputtering pressure, ranging from 5 to 50 mTorr using a mixture of
Ar and O
2
(1:1), on the properties of the IrO
x
films deposited by pulsed-DC reactive sputtering. The sput-
tered IrO
x
films were characterized by surface analysis methods (scanning electron microscopy, atomic
force microscopy, energy dispersive X-ray spectrometry, X-ray diffraction), four-point probe method,
and electrochemical techniques (cyclic voltammetry and electrochemical impedance spectroscopy). The
optimal sputtering pressure was identified to be 5mTorr at which the activated IrO
x
film showed high-
est charge storage capacity of 28.3 mC/cm
2
, which was almost three times higher than that of samples
deposited at 50mTorr. The IrO
x
films deposited at low pressure showed excellent mechanical electrical
and electrochemical characteristics and hence can be recommended as an ideal stimulation electrode
material for neuroprosthetic applications.
© 2008 Elsevier B.V. All rights reserved.
1. Introduction
Functional electrical stimulation (FES) of the neural tissue is a
promising technique for the restoration of a variety of physiologi-
cal functions [1,2]. FES requires transferring an external electrical
signal from an implantable microelectrode to the neurons; there-
fore, the electrode surface plays a critical role in signal transduction.
To improve the performance of the device, the microelectrodes are
often coated with material which can efficiently convert electrical
current from the device into ionic current in vivo and vice versa.
The charge delivery capacity (CDC, mC/cm
2
) of an electrode mate-
rial is the ability of the material to transfer electrical charge to
ionic charge in vivo. Higher CDC would require less area to trans-
fer certain amount of charge, giving freedom to miniaturize neural
electrodes. Smaller electrode areas are desired in neuroprosthe-
ses applications to stimulate or record from single unit, thereby,
increasing the neural selectivity. Small microelectrodes also help
reduce neural damage and immune system response [3]. The abil-
ity of the electrode material to deliver high charge capacity will
also lower the power consumption of the device, as lower ampli-
tude of voltage/current or pulse width would be required to elicit an
action potential. This will increase battery life making it especially
useful in chronic use. Furthermore, increasing the charge delivery
capacity of the electrode allows higher stimulation currents while
operating within voltage limits that avoid electrolysis of water and
bubble formation, oxidation of organic and inorganic species, and
material corrosion or dissolution. Biocompatibility of the electrode
∗
Corresponding author.
E-mail address: s.negi@utah.edu (S. Negi).
coatings is also critical for the success of the stimulation device,
especially in chronic applications. One of the factors which influ-
ence the biocompatibility of the electrode is the surface roughness.
Smooth electrode coatings are required to potentially reduce the
radius neuronal necrosis and/or the thickness of connective tissue
[3].
The CDC depends on the details of the stimulation pulse used
(like pulse width, frequency, and amplitude), electrode bias, and
the charge transfer mechanism, where the latter depends on the
electrode material. Iridium oxide (IrO
x
) films have received con-
siderable attention as a coating for neural stimulation electrode
due to their high charge delivery [4–6] and corrosion resistance
[1,6].
The optical, electrical, mechanical, and chemical properties
of the iridium oxide films are affected by the film thickness,
microstructure, composition, and surface morphology. These, in
turn, are influenced by the method and parameters used to deposit
the films. The surface area of the film as well as the morphology of
the iridium oxide influence charge storage capacity [7,8] because
any deviation from the smooth morphology would increase the
real surface area, although the geometrical surface area will be
constant. Important process parameters include deposition pres-
sure, substrate bias [9], sputtering gas composition [7], oxygen
flow rate [10], and substrate temperature [11]. Iridium oxide films
reported in the literature were deposited either by RF or DC mag-
netron sputtering. However, the dielectric deposition, especially by
reactive DC sputtering has been hindered due to ‘target poison-
ing’. Though the reacted material in a sputtering chamber can be
directed towards a substrate with high accuracy, but the nature of
the process allows some material to fall back onto the target. The
dielectric material electrically insulates the target from the plasma
0925-4005/$ – see front matter © 2008 Elsevier B.V. All rights reserved.
doi:10.1016/j.snb.2008.11.015