INTERNATIONAL JOURNAL of RENEWABLE ENERGY RESEARCH D. Amanya et al., Vol.6, No.3, 2016 Study of the GaN Semiconductor Effect as a thin First layer of a Two Layers Solar Cell without Diffusion Doping Technique Dario Amaya*‡, Juan Manuel Sánchez **, Olga Lucia Ramos*** *Program of Mechatronic Engineering, Faculty of Engineering, Nueva Granada Military University ** Program of Electronic Engineering, Faculty of Engineering, Francisco Jose de Caldas District University *** Program of Mechatronic Engineering, Faculty of Engineering, Nueva Granada Military University (dario.amaya@unimilitar.edu.co, jmsanchezc@udistrital.edu.co, olga.ramos@unimilitar.edu.co) ‡ Corresponding Author; Dario Amaya, Program of Mechatronic Engineering, Nueva Granada Military University, Carrera 11 # 101 – 80, Bogota D.C, Colombia. Tel: +5716500000 Ext 1280, dario.amaya@unimilitar.edu.co Received: 29.03.2016 Accepted:14.06.2016 Abstract- The XXI century came with a lot of technological advances, being most of them productive and helpful in the human life, looking for deeply there is a huge problem that the population and the planet inherited from XIX and XX centuries and is called global warming, now in this century that issue is affecting the whole planet in many different ways. One of the solutions to this problem is to eliminate our fossil fuel dependency by changing it for a sustainable and clean way as are the renewable energies, and most of it the solar one, considered as the greatest one. Which through Solar cells, it is possible to capture and converting it into electricity, but nowadays the conversion efficiency is around 15%, lowering its attractiveness and its chances as a way to replace the actual energy sources, that is the reason why different studies have been performed, in order to increase the efficiency, by modifying the physicochemical structure of the semiconductors used or changing some processes like the diffusion doping one, where the main purpose of this process is to modify the carries and the electrical chargers of the semiconductor, which has a significant effect in the behaviour of the whole cell, like in this paper where a deep study of the Gallium nitride (GaN) layer Effect is performed in a Two Layers Solar Cell based on Aluminium gallium arsenide (AlGaAs), Silicon (Si) and Indium phosphide (Inp) semiconductors, with the aim of replacing the diffusion doping process with the proposed scheme of solar cell, which presents different advantages as is going to be observed along this study. Keywords- Diffusion Doping, Solar Cells, Tandem Cell, PC1D, Gallium Nitride, Energetic Efficiency. 1. Introduction The current environmental awareness, at global level and different problematic like global warming and climate change have impulse the promotion and supporting of alternatives in order to reduce the greenhouse effect, which have become in the main source of the global warming. One of the most viable way to reduce these effects is implementing clean alternatives to produce energy, like the sun as is described in [1]. According to [2] and [3] solar energy uses, as a method of processing and capturing sunlight, photovoltaic cells based on different semiconductor materials such as Silicon and Germanium. These semiconductors allow to produce energy transforming photon energy in electrical energy by a physic-chemical effect of movement electrons inside of the cell. In [4] and [5] the concept of tandem cell is to harness the most possible quantity of energy radiated by the sun along its spectre at which is transmitted, to perform this multiple semiconductors are employed in order to use their