Open Journal of Inorganic Non-metallic Materials, 2012, 2, 11-17 http://dx.doi.org/10.4236/ojinm.2012.22002 Published Online April 2012 (http://www.SciRP.org/journal/ojinm) 11 DC Conductivity and Dielectric Behaviour of Glassy Se 100–x Zn x Alloy Mohd. Nasir, M. Zulfequar Department of Physics, Jamia Millia Islamia, New Delhi, India Email: nasir_sphy@yahoo.com, mzulfe@rediffmail.com Received December 22, 2011; revised February 3, 2012; accepted February 18, 2012 ABSTRACT The DC conductivity and dielectric properties of glassy Se 100–x Zn x 2 ≤ x ≤ 20 alloys have been investigated in the tem- perature range 303 - 487 K with frequency range 100 Hz – 1 MHz. It is observed that DC conductivity decreases and the activation energy increases with Zn content in Se-Zn system. Dielectric dispersion is observed when Zn incorpo- rated in Se-Zn glassy system. The results are explained on the basis of DC conduction mechanism and dipolar-type di- electric dispersion. Keywords: Glass; DC Conductivity; Activation Energy; Dielectric Constant; Dielectric Loss; DC Conduction Loss 1. Introduction Chalcogenide Se based is very important due to its cur- rent use as photoreceptors in TV Videocon pick-up tubes [1], conventional xerographic machine and digital X-ray imaging [2,3].These types glasses are belongs to a spe- cial group of amorphous semiconductors, which include one, two, three and more chalcogenide elements S, Se, Te from the VI group of the periodic table. From the technical point of view’s Se based glassy alloy is impor- tant because of their potential applications. To defeat the difficulties, confirm additives are used and mostly used of Se-Zn Se-Sb, Se-Te, Se-Ge, Se-Si and Se-ln is the great interest important properties such as greater hard- ness, higher sensitivity, higher conductivity and smaller aging effects as compared to pure a-Se. The chalcogenide glassy are useful semiconductors point of application in optics, electronics and optoelectronics like as holography, infrared lenses, ionic sensors, ultra fast optical sensors. It has been focused on chalcogenide glasses of Se-Zn sys- tem [4,5] as the materials have been found importance for their electrical, optical, dielectric and kinetics pa- rameters Stable glasses which have good photosensitive properties have been produced and can be n or p type. In low field conduction, the mobility and free carrier con- centration are considered to be constant with field. How- ever, the application of high field to free carrier system may affect both the mobility and the number of charge carriers. These studies have been stimulated by the at- tractive possibilities of using the structural disorder in amorphous semiconductors for the development of better, cheaper and more reliable solid state devices [6,7]. Sev- eral band models have been proposed to explain the elec- tronic structure of these materials [8,9]. In the present work, we have reported the electrical and dielectric properties of glassy Se 100–x Zn x alloys. 2. Experimental Preparation of Glassy Alloys Glassy alloys of Se 100–x Zn x , (where 2 ≤ x ≤ 20) are pre- pared by melt quenching method. The highly pure mate- rials (99.999%) having the desired compositional ratio of elements (Se and Zn) are sealed in a quartz ampoules (of length 7 cm and internal diameter ~8 mm) in a vacuum of about ~10 –5 Torr. The sealed ampoules are kept inside a furnace where the temperature is raised to 850˚C at a rate of 4˚C - 5˚C/min for 11 hours with frequent rocking to ensure the homogenization of the melt. After rocking the ampoules are removed from the furnace and are cooled rapidly in ice-cool water to obtain the glassy nature. This quenching is done in ice-cool water. The nature of glassy alloys is verified by X-ray diffraction. The bulk samples in the form of pellets of pellets (diameter 1.0 cm and thickness 0.2 cm) are obtained by compressing the fine powder of glassy alloys under a load of about 4.11 × 10 4 Pa using the hydraulic pressure. The DC conductivity and dielectric measurements are maintained under a vac- uum of 10 –3 Torr. The temperature is measured by mount- ing a calibrated chromel alumel thermocouple near the sample in a specially designed metallic sample holder. The current is measured with a digital picoammeter (Model DPA-111) by applied the dc voltage 1.5 Volts across the pellet sample and resulting the temperature dependent Copyright © 2012 SciRes. OJINM