Gate-tunable exchange bias effect in FePS 3 -Fe 5 GeTe 2 van der Waals heterostructures Sultan Albarakati 1, 2# , Wen-Qiang Xie 3# , Cheng Tan 1# , Guolin Zheng 1* , Meri Algarni 1 , Junbo Li 4 , James Partridge 1 , Michelle J. S. Spencer 1 , Lawrence Farrar 1 , Yimin Xiong 4 , Mingliang Tian 4,5 , Xiaolin Wang 6,7 , Yu-Jun Zhao 3* , Lan Wang 1* 1 ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), school of Science, RMIT University, Melbourne, VIC 3001, Australia. 2 Physics Department, Faculty of Science and Arts, P.O. Box 80200, Code 21589 Khulais, University of Jeddah, Saudi Arabia. 3 Department of Physics, South China University of Technology, Guangzhou 510640, China. 4 Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences (CAS), Hefei 230031, Anhui, China. 5 Department of Physics, School of Physics and Materials Science, Anhui University, Hefei 230601, Anhui, China. 6 ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), University of Wollongong, Wollongong, NSW 2500, Australia. 7 Institute for Superconducting & Electronic Materials, Australian Institute of Innovative Materials, University of Wollongong, Wollongong, NSW 2500, Australia. # These authors equally contributed to the paper. * Corresponding authors. Correspondence and requests for materials should be addressed to G. Z. (email: guolin.zheng@rmit.edu.au), Y.-J. Z. (email: zhaoyj@scut.edu.cn) and L. W. (email: lan.wang@rmit.edu.au).