International Journal of High Speed Electronics and Systems Vol. 27, Nos. 1 & 2 (2018) 1840006 (12 pages)  World Scientific Publishing Company DOI: 10.1142/S0129156418400062 1840006-1 Quantum Dot Floating Gate Nonvolatile Random Access Memory Using Ge Quantum Dot Channel for Faster Erasing Murali Lingalugari GLOBALFOUNDRIES, Malta, NY 12020, USA Evan Heller Synopsis Inc., Ossining, NY 10562, USA evankheller@gmail.com Barath Parthasarathy, John Chandy, Faquir Jain * Electrical and Computer Engineering, University of Connecticut, 371 Fairfield Way, Unit 4157, Storrs, CT 06269, USA * faquir.jain@uconn.edu Received 5 April 2017 Accepted 8 May 2018 This paper presents an approach to enhance floating gate quantum dot nonvolatile random access memory (QDNVRAM) cells in terms of higher-speed and lower-voltage Erase not possible with conventional floating gate nonvolatile memories. It is achieved by directly accessing the floating gate layer with a Ge quantum dot access channel via an additional drain (D2) during the Erase and/or Write operation. Quantum mechanical simulations in GeO x -cladded Ge quantum dot layers functioning as the floating gate as well access channel to facilitate Erase and Write are presented. Experimental data on fabricated long channel nonvolatile random access memory cell with SiO x -cladded Si dots is presented. Quantum simulations show lower voltage operation for GeOx-cladded Ge QD floating gate than SiOx-cladded Si dots. The Erase time is orders of magnitude faster than flash and is comparable to competing NVRAMs. Keywords: Nonvolatile random access memory; quantum dot floating gate. 1. Introduction Conventional flash memories use charge traps in the floating gate silicon nitride layer in Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) structures. Tiwari et al. [1, 2] utilized nano-crystalline silicon dots as a floating gate which replaced the traps in the silicon nitride layer. However, Si quantum dots (QDs) were non-uniform in dot sizes as well as inter-dot spacing. Use of metallic nanocrystals [3-7] and the replacement of uncladded quantum dots with cladded quantum dots [8-13] has been reported. The cladded quantum dot (SiO x cladded Si and GeO x cladded Ge) floating gate layer reduces the charge leakage because the cladding acts as a barrier even if there are defects in the tunnel oxide. Flash memories * Corresponding author. Int. J. Hi. Spe. Ele. Syst. 2018.27. Downloaded from www.worldscientific.com by 138.128.52.78 on 08/08/19. Re-use and distribution is strictly not permitted, except for Open Access articles.