Improvement in electrostatic effeciency using workfunction modulated dual metal gate FinFET Mitali Daga, Guru Prasad Mishra ⇑ Department Electronics and Communication, National Institute of Technology Raipur, Raipur, India article info Article history: Received 6 August 2020 Accepted 2 September 2020 Available online xxxx Keywords: Mole fraction Dual-metal Subthreshold Convergence Electrrostatic efficiency Scalability abstract This paper demonstrates a 3-D simulation study of a workfunction modulated dual material gate FinFET (WMDMGF). The source side gate material workfunction of a dual material gate FinFET is modulated lin- early keeping drain side material workfunction to be constant. This model provides improvement in terms of DC performance such as better drive current and minimum threshold voltage. Thus, enhancing the switching characteristics of the device and providing better speed. The model is simulated using Silvaco TCAD tool, and the results are compared with single metal gate and dual metal gate FinFET performance. Ó 2019 Elsevier Ltd. All rights reserved. Selection and peer-review under responsibility of the scientific committee of the International Confer- ence on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology. 1. Introduction Over the past decades, the constant scaling of MOSFETs increases transistor density and ICs efficiency [1]. Pursuing this trend is very challenging in nanometer regime, due to increasing subthreshold leakage. In deeply scaled planar MOSFETs, due to nar- rowing of channel length, drain potential influences electrostatics of channel. As a result, gate loses control over the channel. Recently, multi-gate MOSFETs (FinFETs, Omega-FET, Gate all around MOSFETs), have emerged as good alternatives to planar MOSFETs [2]. In contrast to conventional planar MOSFETs, multi- gate devices have high immunity to punch through effects and very less channel impurity accumulation. So, multi-gate MOSFETs are advantageous for scaling of gate length and threshold voltage fluctuation. Out of all multi-gate MOSFETs, FinFETs are emerged as best alternative to planar MOSFETs, because of its simple structure and proficiency in fabrication [3,4]. FinFET devices are fabricated on SOI-wafers [5]. Tri-gate FinFETs (TG-FinFETs) has a slight advan- tage over dual-gate (DG-FinFETs); they have fewer gates to source capacitance, and more current conduction due to an additional top gate. FinFET shows much better technological and electrical parameters convergence for advanced nodes. Hence being most attractive for implementing advanced CMOS devices. Increasingly being used in Integrated circuits (FPGA, MCU, SoC, CPU and net- work processors), because of its higher levels of scalability [6,7]. Many works has been reported in FinFETs, to suppress short channel effects, reduce threshold value, increase on current, increase speed of the device [8,9]. Similarly, gate control in work- function is very essential, because threshold voltage in a lightly doped channel is directly influenced by gate workfunction modula- tion. For advanced CMOS technologies, the metal gate electrode is very essential to control gate depletion, reduce the threshold value, and to get over the discrepancy of polysilicon gate to high dielec- tric gate materials. Metal gate electrode introduces a new variation of workfunction depending on the metal grains, different work- functions can be adjusted by mole fraction variation [10,11]. In addition to threshold variation, the drive current of a circuit is also affected by workfunction modulation. The concept of divid- ing gate metal electrode in two equal parts has been introduced earlier, and many works has been reported [12,13]. In this paper, the workfunction of the metal is modulated linearly in the source end of the gate electrode, and drain end gate electrode having con- stant workfunction [14,15]. This introduces the concept of work- function modulated dual material gate FinFET (WMDMGF). The proposed work is simulated using Silvaco TCAD device tool [16], and the results are compared with the single material and dual material gate performance. https://doi.org/10.1016/j.matpr.2020.09.082 2214-7853/Ó 2019 Elsevier Ltd. All rights reserved. Selection and peer-review under responsibility of the scientific committee of the International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology. ⇑ Corresponding author. E-mail address: gpscmishra.etc@nitrr.ac.in (G. Prasad Mishra). Materials Today: Proceedings xxx (xxxx) xxx Contents lists available at ScienceDirect Materials Today: Proceedings journal homepage: www.elsevier.com/locate/matpr Please cite this article as: M. Daga and G. Prasad Mishra, Improvement in electrostatic effeciency using workfunction modulated dual metal gate FinFET, Materials Today: Proceedings, https://doi.org/10.1016/j.matpr.2020.09.082