Accepted Manuscript Design of high speed InGaAs/InP one-sided junction photodiodes with low junction capacitance Jie Xu, Xiupu Zhang, Ahmed Kishk PII: S0030-4018(18)31142-8 DOI: https://doi.org/10.1016/j.optcom.2018.12.085 Reference: OPTICS 23753 To appear in: Optics Communications Received date : 26 February 2018 Revised date : 15 December 2018 Accepted date : 27 December 2018 Please cite this article as: J. Xu, X. Zhang and A. Kishk, Design of high speed InGaAs/InP one-sided junction photodiodes with low junction capacitance, Optics Communications (2018), https://doi.org/10.1016/j.optcom.2018.12.085 This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain.