Accepted Manuscript Regular paper Investigation of DC-RF and Breakdown Behaviour in L g = 20 nm Novel Asym- metric GaAs MHEMTs for Future Submillimetre Wave Applications J. Ajayan, T. Ravichandran, P. Mohankumar, P. Prajoon, J. Charles Pravin, D. Nirmal PII: S1434-8411(17)32438-X DOI: https://doi.org/10.1016/j.aeue.2017.12.022 Reference: AEUE 52172 To appear in: International Journal of Electronics and Communi- cations Received Date: 13 October 2017 Accepted Date: 19 December 2017 Please cite this article as: J. Ajayan, T. Ravichandran, P. Mohankumar, P. Prajoon, J. Charles Pravin, D. Nirmal, Investigation of DC-RF and Breakdown Behaviour in L g = 20 nm Novel Asymmetric GaAs MHEMTs for Future Submillimetre Wave Applications, International Journal of Electronics and Communications (2017), doi: https:// doi.org/10.1016/j.aeue.2017.12.022 This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain.