Accepted Manuscript N-type polymeric organic flash memory device: Effect of reduced graphene oxide floating gate B. Hafsi, A. Boubaker, D. Guerin, S. Lenfant, A. Kalboussi, K. Lmimouni PII: S1566-1199(17)30097-6 DOI: 10.1016/j.orgel.2017.02.035 Reference: ORGELE 3991 To appear in: Organic Electronics Received Date: 21 November 2016 Revised Date: 1 February 2017 Accepted Date: 24 February 2017 Please cite this article as: B. Hafsi, A. Boubaker, D. Guerin, S. Lenfant, A. Kalboussi, K. Lmimouni, N- type polymeric organic flash memory device: Effect of reduced graphene oxide floating gate, Organic Electronics (2017), doi: 10.1016/j.orgel.2017.02.035. This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain.