Accepted Manuscript Electrical mechanisms of bi-stable memory devices based on an Al/PVK:ZnO NPs/ ITO structure with different ZnO NPs annealing temperatures Korakot Onlaor, Natpasit Chaithanatkun, Benchapol Tunhoo PII: S1567-1739(16)30200-0 DOI: 10.1016/j.cap.2016.07.017 Reference: CAP 4290 To appear in: Current Applied Physics Received Date: 23 February 2016 Revised Date: 26 July 2016 Accepted Date: 31 July 2016 Please cite this article as: K. Onlaor, N. Chaithanatkun, B. Tunhoo, Electrical mechanisms of bi- stable memory devices based on an Al/PVK:ZnO NPs/ITO structure with different ZnO NPs annealing temperatures, Current Applied Physics (2016), doi: 10.1016/j.cap.2016.07.017. This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain.