CHEMICAL ENGINEERING TRANSACTIONS VOL. 57, 2017 A publication of The Italian Association of Chemical Engineering Online at www.aidic.it/cet Guest Editors: Sauro Pierucci, Jiří Jaromír Klemeš, Laura Piazza, Serafim Bakalis Copyright © 2017, AIDIC Servizi S.r.l. ISBN 978-88-95608- 48-8; ISSN 2283-9216 New Designed Procedure for G/SiO 2 /SiC nano- heterojunctions Growth on Recycled 3C-SiC Powder Maria Sarno a , Sergio Galvagno b , Rosangela Piscitelli a , Sabrina Portofino b , Claudia Cirillo* a , Paolo Ciambelli a a Department of Industrial Engineering DIIN and Research Centre NANO_MATES, University of Salerno, Via Giovanni Paolo II, 132, 84084 Fisciano (SA), Italy b Department of Environment, Global Change and Sustainable Development, C.R. ENEA Portici, via Vecchio Macello loc. Granatello, 80055 Portici, Na, Italy clcirillo@unisa.it Few layer graphene/SiO2/SiC (G/SiO2/SiC) core-layers-sheath nano-heterojunctions were obtained by a new easy and cheap designed procedure by thermal annealing at atmospheric pressure and low temperature on 3C-SiC powder derived from exhausted activated carbon. Recycled SiC was chosen as growth substrate to realize a convenient process and to increase the added value of the recycled, combining the favourable properties of different substances. SiC powder and the advanced materials obtained were carefully characterized by the combining use of different techniques: transmission electron microscopy (TEM) with EDAX probe, scanning electron microscopy (SEM), X-ray diffraction analysis, Raman spectroscopy, thermogravimetric analysis coupled with quadrupole mass detector (TG-DTG-MASS). 1. Introduction Graphene has attracted vast interest, in recent years, thanks to the very high number of application’s fields. Silicon carbide is a wide-bandgap semiconductor with many interesting properties, such as high hardness, large thermal conductivity, a low coefficient of thermal expansion, and excellent resistance to erosion and corrosion. During the fast development of nanotechnology in the past decade, research effort has been focused on the preparation, thought different approaches, of nanometer-sized functional electronic devices. Nano-scaled electronic devices with a variety of functions may be realized by combining different nanomaterials. For the intrinsic characteristic of SiC and graphitic carbon, and looking at the possibility to obtain a metallic-insulator-semiconductor geometry, coaxial nanocable of SiC-SiO2–carbon (Zhang et al., 1998; Li et al., 2004) and chains of carbon nanotubes-SiC, have been also prepared by CVD or reactive laser ablation (Panda et al., 2010; Cai et al., 2007). Although the thermal oxidation of SiC to SiO2 is a common and know procedure in the microelectronic industry, it is rather complicated because the product could results in mixed oxides containing C species. Numerous paper have been published on this theme (Schürmann et al., 2006), one of the key aspect was the diffusion of CO and CO2 molecules in SiO2 during SiC oxidation, whereas a challenging goal was to avoid carbon intermixing in the SiO2 interlayer and covering the outer surface by a carbon layer, e.g. few layer graphene. Here we report, for the first time, the preparation of few layer graphene/SiO2/SiC (G/SiO2/SiC) nanofilaments by a new designed procedures, consisting in a thermal annealing under few percents of oxygen in nitrogen of 3C-SiC powder, derived from exhausted activated carbon (Sarno et al., 2016), at atmospheric pressure and low temperature for their intrinsic advantages. The composite materials obtained were carefully characterized by the combining use of different techniques: transmission electron microscopy (TEM) coupled with an EDAX probe, scanning electron microscopy (SEM), Raman spectroscopy, thermogravimetric analysis (TG-DTG) coupled with a quadrupole mass detector and X- ray diffraction analysis. DOI: 10.3303/CET1757255 Please cite this article as: Sarno M., Galvagno S., Piscitelli R., Portofino S., Cirillo C., Ciambelli P., 2017, New designed procedure for g/sio2/sic nano-heterojunctions growth on recycled 3c-sic powder, Chemical Engineering Transactions, 57, 1525-1530 DOI: 10.3303/CET1757255 1525