Copyright © 2023 The Author(s): This is an open-access article distributed under the terms of the Creative Commons Attribution 4.0 International License (CC BY-NC 4.0) which permits unrestricted use, distribution, and reproduction in any medium for non-commercial use provided the original author and source are credited. International Journal of Scientific Research in Science and Technology Available online at : www.ijsrst.com Print ISSN: 2395-6011 | Online ISSN: 2395-602X doi : https://doi.org/10.32628/IJSRST52310526 132 D. C. Electrical Conductivity of Ga doped ZnO N. R. Thakare *1 , V. R. Chinchamalatpure 2 1 Department of Physics. P R. Pote Engineering. College Amravati, India 2 Department of Physics Hutatma Rashtriya Arts and Science College, Ashti, Distt: Wardha, India Corresponding Author Email: nilesh_thakarey@rediffmail.com A R T I C L E I N F O A B S T R A C T Article History: Accepted: 07 Sep 2023 Published: 19 Sep 2023 Doped ZnO is seen as a potential substitute to the expensive Sn doped material, as a transparent electrode in optoelectronic devices. Here, highly conductive and transparent Ga doped ZnO were prepared by chemical vapor deposition. The lowest resistivity and highest carrier concentration ever reported for CVD grown ZnO, Ga was achieved due to using oxygen poor growth conditions enabled by diethylzinc and triethylgallium precursors. Physical properties like Electrical Conductivity of Zinc Oxide (ZnO) are studied with different doping in it. The dopant to study the varying physical properties of the ZnO semiconductor with respect to Gallium (Ga) semiconductor with changing doping by weight percent of0, 1, 3 and 5 wt. % gallium doped ZnO system are reported here. The electrical properties include dc electrical studies. Keywords: D.C. Electrical Conductivity, ZnO Publication Issue Volume 10, Issue 5 September-October-2023 Page Number 132-135 I. INTRODUCTION Zinc oxide (ZnO) is a large bandgap semiconducting material with optoelectronic properties that is often used as a transparent conducting oxide in photovoltaic devices and are materials that display both high visible light transparency and low electrical resistivity, visible light transmittance, which is comparable to commercially available and widely used. The achievement, for the first time, of such low resistive ZnO: Ga doped is important as an ambient pressure, scalable and highly tunable technique that has industrial importance used for the fabrication of wide variety of thin film materials. Semiconducting metal oxides are widely used as inexpensive and robust sensor material for toxic, hazardous and combustible gases and vapors in safety and automotive applications. Few semiconducting metal oxide materials used in these applications are ZnO, SnO2, In2O3, Fe2O3, NiO, etc [1-11]. of which, zinc oxide (ZnO), an n-type semiconductor that displays a hexagonal crystalline wurtzitetype structure, with space group P63mc. The importance of ZnO is due to its unusual physical properties such as high conductance, chemical and thermal stability,