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Materials Science in Semiconductor Processing
journal homepage: www.elsevier.com/locate/mssp
The effect on the impedance characteristics of the metal oxides (Al
2
o
3
and
Zno) doping into polyaniline
E. Ahlatcıoğlu Özerol
a,
⁎
, A. Çelik Bozdoğan
b
, B. Filiz Şenkal
c
, M. Okutan
b
a
Department of Bioengineering, Yildiz Technical University, Istanbul, Turkey
b
Department of Physics, Yildiz Technical University, Istanbul, Turkey
c
Department of Chemistry, Istanbul Technical University, Istanbul, Turkey
ARTICLE INFO
Keywords:
Polyaniline
Metal Oxide
ZnO
Al
2
O
3
Impedance spectroscopy
ABSTRACT
In this study, the doping metal oxides; ZnO and Al
2
O
3,
(MO for short) into poly (aniline) (PANI) how that affects
the dielectric properties have been investigated by the impedance analysis technique. PANI, PANI-Al
2
O
3
and
PANI-ZnO were synthesized by chemical oxidative polymerization. Both FTIR and SEM are used to characterize
the structure and morphologies of these composites. Dielectric properties of PANI and PANI–MO composites
have been performed in the frequency range 100 Hz -1 MHz. It was seen that the values of the dielectric
constant and impedance increase with doping Al
2
O
3
and ZnO into PANI. Absorption coefficient (α) and
relaxation times (τ) parameters were calculated and it is revealed that the relaxation mechanism changed
significantly by the doping of metal oxide into PANI. Moreover, the conductivity properties of PANI-MO
composites were performed and it is seen that “s” parameter value correlated Barrier Hoping (CBH)
Mechanism.
1. Introduction
Organic conducting polymers have a wide range of useful applica-
tions due to unusual electronic properties such as good electrical
conductivity, low ionization potential and high electron affinity [1].
Among them, PANI has attracted increasing attention owing to low
cost, lightweight and high environmental stability in the last decades
[2,3]. Because of its unique properties, it has a wide applications in
diverse areas such as batteries [4,5], sensors [6,7], electronic devices
[8]. More recently, the doping inorganic oxides (CeO
2
, CuO, SnO
2
,
TiO
2
, ZnO, Al
2
O
3
) into PANI allows the modification of its physical
properties and the development of new materials in the field of science
and technology [9–18].
ZnO has a versatile material due to its wide direct band gap
(3.37 eV) with potential applications in short wavelength light emitting
devices, sensors and solar cells [19,20]. That is why it is suitable for the
use of ZnO to absorbe high-energy photons (UV light) [21]. Cho et al.
[22] reports that the polycrystalline ZnO thin films show good
luminescent properties. ZnO can also be used at oxide potential
application in optoelectronics due to its physical properties. [22,23].
Kennedy et al. reported the electrical and optical properties of ZnO thin
films and their results show that electrical conductivity can be
controlled by post growth thermal treatments [19].
Eskizeybek et al. [24] synthesized PANI/ZnO nano composites and
showed that the thermal stability of PANI/ZnO composites increased
with the increasing of the amount of the ZnO nanoparticles in the
reaction mixture because of the strong interaction between the polymer
and ZnO nanoparticles. Also there are a few reports have been
published on the synthesis, morphology, optical, photocatalytical
[24–28], electrical and dielectric properties of ZnO-PANI composites
[15,18,29–31]. Olson et al. [32] showed the feasibility in making device
using these properties. In addition; Booth et al. [33]. performed low-
energy implantation of lead ions of various fluences in conducting
polypyrrole films and they observed an increasing in charge-carriers. In
another research of Booth et al. [34] low-energy platinum were
implanted to conducting polymer to gain more conductive film.
Besides, they aimed to show that the obtained films could use in
sensors.
Similarly, Al
2
O
3
is an attractive material because of its higher
dielectric constant. Doping Al
2
O
3
into PANI creates a strong interac-
tion between polymer and Al
2
O
3
which reinforce dielectric properties
of PANI [17,35]. Therefore, it is considered to be a candidate for
dielectric applications [36,37].
In this work, PANI, ZnO-PANI and Al
2
O
3
-PANI composites were
synthesized by chemical oxidative polymerization. Fourier Transform
Infrared Spectroscopy (FTIR) and Field Emission Scanning Electron
http://dx.doi.org/10.1016/j.mssp.2016.08.016
Received 5 March 2016; Received in revised form 10 June 2016; Accepted 18 August 2016
⁎
Corresponding author.
E-mail address: esma_ahlatcioglu@yildiz.edu.tr (E. Ahlatcıoğlu Özerol).
Materials Science in Semiconductor Processing 56 (2016) 357–361
1369-8001/ © 2016 Elsevier Ltd. All rights reserved.
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