J. Vac. Sci. Technol. A 38, 053201 (2020); https://doi.org/10.1116/6.0000180 38, 053201 © 2020 Author(s). Interfacial chemistry and electronic structure of epitaxial lattice-matched TiN/Al 0.72 Sc 0.28 N metal/semiconductor superlattices determined with soft x-ray scattering Cite as: J. Vac. Sci. Technol. A 38, 053201 (2020); https://doi.org/10.1116/6.0000180 Submitted: 10 March 2020 . Accepted: 23 June 2020 . Published Online: 16 July 2020 Bidesh Biswas , Sanjay Nayak , Vijay Bhatia, Ashalatha Indiradevi Kamalasanan Pillai, Magnus Garbrecht , Mohammed H. Modi, Mukul Gupta, and Bivas Saha ARTICLES YOU MAY BE INTERESTED IN Schottky barrier height of epitaxial lattice-matched TiN/Al 0.72 Sc 0.28 N metal/semiconductor superlattice interfaces for thermionic energy conversion Applied Physics Letters 115, 251901 (2019); https://doi.org/10.1063/1.5126630 High mobility and high thermoelectric power factor in epitaxial ScN thin films deposited with plasma-assisted molecular beam epitaxy Applied Physics Letters 116, 152103 (2020); https://doi.org/10.1063/5.0004761 Practical guides for x-ray photoelectron spectroscopy: Quantitative XPS Journal of Vacuum Science & Technology A 38, 041201 (2020); https://doi.org/10.1116/1.5141395