HAL Id: hal-03341230 https://hal.science/hal-03341230 Submitted on 10 Sep 2021 HAL is a multi-disciplinary open access archive for the deposit and dissemination of sci- entifc research documents, whether they are pub- lished or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L’archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la difusion de documents scientifques de niveau recherche, publiés ou non, émanant des établissements d’enseignement et de recherche français ou étrangers, des laboratoires publics ou privés. Characterization and modeling of 650V GaN diodes for high frequency power conversion Doublet Martin, N. Defrance, Loris Pace, Etienne Okada, Thierry Dusquesne, Emmanuel Collard, Yvon Arnaud, Nadir Idir, Jean-Claude de Jaeger To cite this version: Doublet Martin, N. Defrance, Loris Pace, Etienne Okada, Thierry Dusquesne, et al.. Characterization and modeling of 650V GaN diodes for high frequency power conversion. DMC conference, Jul 2021, BATH, United Kingdom. pp.1-5. hal-03341230