Journal of Mechanical Science and Technology 29 (2) (2015) 715~721
www.springerlink.com/content/1738-494x
DOI 10.1007/s12206-015-0131-0
X-ray diffraction measurement of residual stress in sol-gel grown lead zirconate
titanate thick films on nickel-based super alloy substrate
†
Hamidreza Hoshyarmanesh
1
, Naser Nehzat
1
, Mehdi Salehi
2
and Mojtaba Ghodsi
3,*
1
Dep. of Mechanical Engineering, Isfahan University of Technology (IUT), Isfahan 84156-83111, Iran
2
Dep. of Materials Engineering, Isfahan University of Technology (IUT), Isfahan 84156-83111, Iran
3
Department of Mechanical and Industrial Engineering, Sultan Qaboos University, Muscat 123, Oman
(Manuscript Received December 22, 2013; Revised October 5, 2014; Accepted November 1, 2014)
----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
Abstract
Residual compressive stress of Pb(Zr
0.52
Ti
0.48
)O
3
thick films was investigated using residual strains derived from X-ray diffraction pat-
terns. Sin
2
ψ method was applied for the 5, 10 and 15 µm sol-gel derived thick films annealed at 700°C for 1 hr as high frequency struc-
tural health monitoring square-shape transducers of 10×10 mm, deposited onto the curved nickel-based super alloy substrates. A triaxial
model was proposed based on piezoelectric constitutive equations, and Bragg’s law at a large diffraction angle (~89º) was utilized con-
sidering the electromechanical coupling factor as well as elastic, dielectric and piezoelectric constants. Thickness variations led to a sig-
nificant change in residual stress magnitudes delineated from more-accurate triaxial model compared to small angle plane-stress results
not considering the piezoelectric coupling effects.
Keywords: PZT thick film; Triaxial residual stress; Sol-gel deposition; Supper alloy substrate; X-ray diffraction
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1. Introduction
The optimum performance of Pb(Zr
0.52
Ti
0.48
)O
3
(PZT) thick
films in micro-electro-mechanical systems, actuators, struc-
tural health monitoring transducers, energy harvesting mod-
ules, etc. is extremely influenced by residual stresses and
strains [1]. To improve the electromechanical properties, re-
sidual stresses should be controlled during the film fabrication.
Although residual stress in piezoceramic thin films is often
neglected due to a lack of adequate stress measuring capabili-
ties [2], it has great effects on the properties of thin and thick
films [1, 3]. Tensile or compressive stresses are introduced
dependent on the processing technique and properties of the
substrate/bottom electrode [4]. The influence of residual stress
on preferred domain orientation, dielectric and piezoelectric
behaviors associated with the non-180° domain wall motions
and clamping effects has been studied by several authors [5-
10]. Berfield et al. [2] investigated the influence of residual
stress on sol-gel derived Pb(Zr
0.53
Ti
0.47
)O
3
thin films of vary-
ing thicknesses integrated onto Pt/Ti/SiO
2
/Si substrates. Park
et al. [11] described a new structure to measure the residual
strain of multi-layer piezoelectric thin films prepared by sol-
gel method consisting of SiO
x
/Pt/PZT/Pt on SiN
x
substrate.
Zheng et al. [12] grew Pb(Zr
0.52
Ti
0.48
)O
3
thin films of thick-
nesses 0.05, 0.5, and 1.0 µm on Pt/Ti/Si by pulsed laser depo-
sition (PLD) and proposed an extended model, in which the
piezoelectric coupling factor determined by the elastic, dielec-
tric and piezoelectric constants to evaluate the residual stress
with X-ray diffraction (XRD).
This study has a major concentration on the residual stress
of 5, 10 and 15 µm PZT thick films deposited by sol-gel tech-
nique onto the curved surface of IN738 nickel-based supper
alloy substrate using GAXRD patterns at relatively large dif-
fraction angle (~89º), and a proposed triaxial model consider-
ing the piezoelectric coupling factor. Most literature works
refer to stress/strain analysis of thin films on Si, Pt, or other
laboratory substrates using plane-stress method, not consider-
ing the piezoelectric coupling factor and dielectric permittivity
[2, 4, 10], which are the fundamental terms in piezoelectric
constitutive equations. Although few studies [12] focus on a
two-dimensional extended model to evaluate the residual
stress in small angles regarding coupling factor, they never
present a comprehensive analysis for thick films. Larger dif-
fraction angles noticeably enhance the measurement accuracy.
Sol-gel deposition is popular among a variety of coating
methods to fabricate ferroelectric films, particularly on the
free-shape industrial parts. The main origin of residual stress
was chiefly recognized as being thermal stress due to suppres-
sion of phase transformation and intrinsic stresses in porous
*
Corresponding author. Tel.: +968 24142675, Fax.: +968 24141316
E-mail address: ghodsi@squ.edu.om
†
Recommended by Associate Editor Jun-Ho Jeong
© KSME & Springer 2015