Optical, electrical and electronic properties of SnS thin films deposited by sol gel spin coating technique for photovoltaic applications T. Garmim 1, * , S. Chahib 2 , L. Soussi 3 , R. Mghaiouini 1,4 , Z. El Jouad 1 , A. Louardi 1 , O. Karzazi 5 , M. El Jouad 6 , E. K. Hlil 7 , B. Hartiti 8 , and M. Monkade 1 1 Laboratory of Condensed Matter Physics (LPMC), Department of Physic, Faculty of Sciences, Chouaïb Doukkali University, El-Jadida, Morocco 2 Laboratory of Condensed Matter and Interdisciplinary Sciences (LaMCScI), Department of Physics, Faculty of Sciences, Mohammed V University, Rabat, Morocco 3 Engineering Laboratory of Electrical Systems and Telecommunications, National School of Applied Sciences of Kenitra (ENSAK), Kenitra, Morocco 4 Physical Chemistry Laboratory of Applied Materials, Department of Chemistry, Faculty of Sciences, Ben M’Sik, Hassan II University, Casablanca, Morocco 5 Laboratory of Engineering, Electrochemistry and Modeling Environment (LEEME), Faculty of Sciences, Fez, Morocco 6 Laboratory of Engineering Sciences for Energy, National School of Applied Sciences, Chouaib Doukkali University, El Jadida, Morocco 7 MCBT-UPR CNRS, Néel Institute, Grenoble Alpes University, 38000 Grenoble, France 8 MAC&PM Laboratory, ANEPMAER Group FSTM, Hassan II Casablanca University, B.P 146 Mohamedia, Morocco Received: 8 July 2020 Accepted: 1 October 2020 Ó Springer Science+Business Media, LLC, part of Springer Nature 2020 ABSTRACT In the current study, thin films of tin sulfide (SnS) were grown by sol–gel spin- coating technique deposited on glass substrates. The obtained thin films were characterized using X-ray diffraction (XRD), photoluminescence (PL) and UV– Vis spectrometer and the four point technique, respectively. The effect of annealing temperature on the SnS properties has been studied. The XRD results reveal that the films annealed at 500 °C have good crystalline quality with orthorhombic phase. Fourier-transform infrared spectroscopy (FTIR) spectra shows the Sn–S bond. The photoluminescence spectra showed two categories of band emission. The optical parameters (a, e, n, k, E g , and r op ) were determined using UV–Vis spectroscopy. Moreover, the obtained results were compared to the theatricals results obtained with density functional theory (DFT) method using ab-initio approach. The optical and the electrical properties of the SnS Layers annealed at 400 °C and 500 °C offer the best possibility for their uti- lization in photovoltaic applications. Address correspondence to E-mail: tgarmim@gmail.com https://doi.org/10.1007/s10854-020-04586-y J Mater Sci: Mater Electron