Appl. Phys. Lett. 117, 043101 (2020); https://doi.org/10.1063/5.0015471 117, 043101 © 2020 Author(s). Optoelectronic properties of laser-beam- patterned few-layer lateral MoS 2 Schottky junctions Cite as: Appl. Phys. Lett. 117, 043101 (2020); https://doi.org/10.1063/5.0015471 Submitted: 29 May 2020 . Accepted: 14 July 2020 . Published Online: 27 July 2020 Y. Nagamine, J. Sato, Y. Qian , T. Inoue , T. Nakamura , S. Maruyama , S. Katsumoto , and J. Haruyama ARTICLES YOU MAY BE INTERESTED IN Different types of band alignment at MoS 2 /(Al, Ga, In)N heterointerfaces Applied Physics Letters 116, 252102 (2020); https://doi.org/10.1063/5.0009469 High mobility large area single crystal III–V thin film templates directly grown on amorphous SiO 2 on silicon Applied Physics Letters 117, 042103 (2020); https://doi.org/10.1063/5.0006954 Thermally enhanced hole injection and breakdown in a Schottky-metal/p-GaN/AlGaN/GaN device under forward bias Applied Physics Letters 117, 043501 (2020); https://doi.org/10.1063/5.0011831