Thiophene-centered azomethines: Structure, photophysical and
electronic properties
Zita Tok
arov
a
a, *
, Petra Maxianov
a
a
, Tom
a
sV
ary
b
, Vojtech N
ada
zdy
c
, Daniel V
egh
d
,
Kamil Tok
ar
e, f
a
Department of Chemistry, Faculty of Natural Sciences, University of Ss. Cyril and Methodius, N am. J. Herdu 2, 91701, Trnava, Slovakia
b
Institute of Nuclear and Physical Engineering, Faculty of Electrical Engineering and InformationTechnology, Slovak University of Technology, Ilkovi cova 3,
812 19, Bratislava, Slovakia
c
Centre for Advance Material Application, Slovak Academy of Sciences, Dúbravsk a Cesta 9, 84511, Bratislava, Slovakia
d
Institute of Organic Chemistry, Catalysis and Petrochemistry, Faculty of Chemical and Food Technology, Slovak University oTechnology, Radlinsk eho 9,
81237, Bratislava, Slovakia
e
Center for Computational Material Science, Institute of Physics, Slovak Academy of Sciences, Dúbravsk a Cesta 9, 84511, Bratislava, Slovakia
f
Advanced Technologies Research Institute ATRI, Faculty of Materials Science and Technology inTrnava, Slovak University of Technology, J ana Bottu 8857/
25, 917 14, Trnava, Slovakia
article info
Article history:
Received 2 September 2019
Received in revised form
16 November 2019
Accepted 27 November 2019
Available online 3 December 2019
Keywords:
Azomethines
Thiophene
Frontier molecular orbitals
Energy-resolved electrochemical impedance
spectroscopy
abstract
We present the synthesis and structure characterization of three novel symmetrical azomethines 3a-c
derived from 2,5-diamino-thiophene-3,4-dicarbonitrile together with the unexpected by-product 4
containing the saturated hemiaminal type bond. Photophysical properties (UVeVis and photo-
luminiscence) are shown to be affected mainly by the central thiophene unit with no influence from the
type of linkage e unsaturated imine (-HC]N-) bond in 3a-c vs. the saturated hydroxymethylamino
circuit [eHNeC(OH)H-] in 4. For the first time the electronic properties, such as distribution of the
frontier molecular orbitals and resulting energy gaps, for compounds 3b,c and 4 are calculated by means
of density functional theory methods and confirmed by an immediate experimental method - the
energy-resolved electrochemical impedance spectroscopy.
© 2019 Elsevier B.V. All rights reserved.
1. Introduction
Among the various groups of organic compounds suitable for
applications in functional materials [1e4], azomethines are
explored as components in optoelectronic devices [5,6]. Both the
single molecule azomethine-scaffold or polyazomethines have
been successfully employed as active components in organic light
emitting diodes (OLEDs) [7], hole-transporting units in solar cells
[8] and donor blocks in bulk heterojunction solar cells (BHJ) [9]. The
imine bond (-HC]N-) in azomethines is isoelectronic to the vinyl
bond (-C]C-) [8e10] in their vinylene analogues, which are still
recognized as the ultimate building blocks in organic semi-
conductors (OSCs) and organic photovoltaic devices (OPVs) [1 ,3].
Most of these conjugated compounds are prepared by coupling
aryl-aryl bond forming reactions. The advantage of the hetero-
aromatic derivatives over their homoaryl counterparts is their
straightforward preparation, in particular the reaction towards
azomethines is performed according to the simple Schiff-type
condensation between an amine and aldehyde [11]. Expensive
catalysts are not required and water is the only by-product.
Importantly, physico-chemical properties comparable to vinylenes
are possible with azomethines containing the thiophene ring/s
[7 , 12e14]. The thiophene core affect the energy of frontier molec-
ular orbitals (FMO) and enhances the p-conjugation [14e16].
Consequently, the successful OSC and/or OPV device performance is
strongly dependent on the molecular structure of these hetero-
structures in regard to suitably placed highest occupied molecular
orbital (HOMO) and lowest unoccupied molecular orbital (LUMO)
[17]. The determination of the density of states (DOS) in the entire
energy range from HOMO to LUMO including the presence of de-
fects in the band gap is a prerequisite to the succesfully design of
optoelectronic devices. In these regards we have synthesised and
* Corresponding author.
E-mail address: zita.tokarova@ucm.sk (Z. Tok arov a).
Contents lists available at ScienceDirect
Journal of Molecular Structure
journal homepage: http://www.elsevier.com/locate/molstruc
https://doi.org/10.1016/j.molstruc.2019.127492
0022-2860/© 2019 Elsevier B.V. All rights reserved.
Journal of Molecular Structure 1204 (2020) 127492