Accepted Manuscript Optimization of surface passivation parameters in [ 147 Pm]-Si planar p-n junction betavoltaic based on analytical 1-D minority carrier diffusion equation approaches Swastya Rahastama, Abdul Waris, Sparisoma Viridi, Ferry Iskandar PII: S0969-8043(17)31088-6 DOI: https://doi.org/10.1016/j.apradiso.2019.03.030 Reference: ARI 8660 To appear in: Applied Radiation and Isotopes Received Date: 17 September 2017 Revised Date: 19 March 2019 Accepted Date: 19 March 2019 Please cite this article as: Rahastama, S., Waris, A., Viridi, S., Iskandar, F., Optimization of surface passivation parameters in [ 147 Pm]-Si planar p-n junction betavoltaic based on analytical 1-D minority carrier diffusion equation approaches, Applied Radiation and Isotopes (2019), doi: https:// doi.org/10.1016/j.apradiso.2019.03.030. This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain.