This article has been accepted for publication and undergone full peer review but has not been through the copyediting, typesetting, pagination and proofreading process which may lead to differences between this version and the Version of Record. Please cite this article as doi: 10.1002/rcm.8489 This article is protected by copyright. All rights reserved. Zeng Xiaomei (Orcid ID: 0000-0001-9101-1677) Tolstogouzov Alexander (Orcid ID: 0000-0001-8642-2674) Small Al cluster ion implantation into Si and 4H-SiC Zeng Xiaomei 1 , Pelenovich Vasiliy* ,1 , Ieshkin Alexei 2 , Danilov Andrey 2,3 , Tolstogouzov Alexander 1,4,5 , Zuo Wenbin 1 , Ranjana Jha 6 , Devi Neena 1 , Fu Dejun* ,1 , Xiao Xiangheng* ,1 1 Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Hubei Nuclear Solid Physics Key Laboratory and Center for Ion Beam Application, School of Physics and Technology, Wuhan University, Wuhan, 430072, China 2 Faculty of Physics, Lomonosov Moscow State University, Leninskie gory, 1, Moscow, 119991, Russia 3 Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, 142432, Russia 4 Ryazan State Radio Engineering University, Gagarin Str. 59/1, Ryazan, 390005, Russian Federation and 5 Centre for Physics and Technological Research (CeFITec), Dept. de Física da Faculdade de Ciências e Tecnologia (FCT), Universidade Nova de Lisboa, Caparica, 2829-516, Portugal 6 Department of Physics, Netaji Subhas Institute of Technology, University of Delhi, Dwarka Sector-3, New Delhi 110078, India Email: Xiangheng Xiao* - xxh@whu.edu.cn Fu Dejun*- djfu@whu.edu.cn Vasiliy Pelenovich* - pelenovich@mail.ru