High-eciency energy transfer in the strong orange-red-emitting phosphor CeO 2 :Sm 3+ , Eu 3+ Nguyen Van Hai, a Nguyen Thi Khanh Linh, a Dinh Thi Hien, a Bui Thi Hoan, b Nguyen Minh Tu, c Vuong-Hung Pham, d Duy-Hung Nguyen, d Vu Tuan Anh e and Hoang Nhu Van * e High-eciency energy transfer (ET) from Sm 3+ to Eu 3+ leads to dominant red emission in Sm 3+ , Eu 3+ co- doped single-phase cubic CeO 2 phosphors. In this work, a series of Sm 3+ singly and Sm 3+ /Eu 3+ co-doped CeO 2 cubic phosphors was successfully synthesized by solution combustion followed by heat treatment at 800 °C in air. The crystal structure, morphology, chemical element composition, and luminescence properties of the obtained phosphors were investigated using X-ray diraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy, and photoluminescence analysis. Under 360 nm excitation, the Sm 3+ singly doped CeO 2 phosphor emitted strong yellow-red light at 573 nm ( 4 G 5/2 6 H 5/ 2 ) and 615 nm ( 4 G 5/2 6 H 7/2 ). Meanwhile, the CeO 2 :Sm 3+ , Eu 3+ phosphors showed the emission characteristic of both Sm 3+ and Eu 3+ , with the highest emission intensity at 631 nm. The emission intensity of Sm 3+ decreased with increasing Eu 3+ content, suggesting the ET from Sm 3+ to Eu 3+ in the CeO 2 :Sm 3+ , Eu 3+ phosphors. The decay kinetics of the 4 G 5/2 6 H 5/2 transition of Sm 3+ in the CeO 2 :Sm 3+ , Eu 3+ phosphors were investigated, conrming the high-eciency ET from Sm 3+ to Eu 3+ (reached 84%). The critical distance of energy transfer (R C = 13.7 Å) and the Dexter theory analysis conrmed the ET mechanism corresponding to the quadrupolequadrupole interaction. These results indicate that the high-eciency ET from Sm 3+ to Eu 3+ in CeO 2 :Sm 3+ , Eu 3+ phosphors is an excellent strategy to improve the emission eciency of Eu 3+ . 1. Introduction White-light emitting diodes (WLEDs) have been extensively used in many elds of application, such as in solid lighting, display devices, and optoelectronic devices, because of their high luminous eciency, long lifetime, energy saving, and environment friendliness. 13 A popular method for manufacturing WLEDs is combining tricolor phosphor powder (blue, green, and red phosphors) with an ultraviolet (UV) InGaN chip. 4,5 However, these WLEDs present a high correlated color temperature and low color rendering index due to the lack of a red component. 6,7 To overcome these drawbacks, scholars should explore new red phosphors for WLED applications. The europium trivalent ion (Eu 3+ ) is an important rare-earth (RE) ion that has been widely used as an activator in red- emitting phosphors for WLEDs. 810 The red emission of Eu 3+ is originally from electric dipole transitions. Notably, Eu 3+ - doped phosphors typically exhibit relatively narrow absorption in UV and near-UV regions because of the spin-forbidden transition of Eu 3+ , resulting in low emission eciency. 11,12 This defect can be compensated by introducing sensitizing ions, such as Tb 3+ , Bi 3+ , Gd 3+ , and Sm 3+ , 1315 which can absorb excitation energy eciently and transfer it to Eu 3+ . Sm 3+ is a popular sensitizer for improving the eciency emission of Eu 3+ ion due to the small energy dierence between the 4 G 5/2 level of Sm 3+ and the 5 D 0 level of Eu 3+ (about 600 cm -1 ), leading to easy phonon-assisted energy transfer (ET). 13 Hence, the energy transfer between Sm 3+ and Eu 3+ ions was widely inves- tigated in a variety of host lattices. 12,16,17 J. Wu et al. 16 found that the ET eciency from Sm 3+ to Eu 3+ up to 65% in YPO 4 :Sm 3+ , Eu 3+ phosphor corresponds to the electric dipoleelectric dipole interaction mechanism. Y. Li et al. 17 reported that ET eciency from Sm 3+ to Eu 3+ was 13.7% in La 2 CaB 10 O 19 :Sm 3+ , Eu 3+ phos- phor, further conrmed by JuddOfelt theory. Meanwhile, X. Zhang et al. 12 developed Ca 2 GdNbO 6 :Sm 3+ , Eu 3+ phosphor with high quantum yield (82.7%), excellent thermal stability, and up to 28.6% ET eciency. In addition, the LED device fabricated a Faculty of Chemistry, Hanoi National University of Education, 136 Xuan Thuy Road, Cau Giay District, Hanoi, Viet Nam b Faculty of ElectricalElectronics Engineering, Thuyloi University, No. 175 Tay Son Road, Hanoi, Viet Nam c Faculty of Pharmacy, Phenikaa University, Yen Nghia, Ha-Dong District, Hanoi 12116, Viet Nam d International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology, No. 01, Dai Co Viet Road, Ha Noi, Viet Nam e Faculty of Materials Science and Engineering, Phenikaa University, Yen Nghia, Ha- Dong District, Hanoi 12116, Viet Nam. E-mail: van.hoangnhu@phenikaa-uni.edu.vn Cite this: RSC Adv. , 2023, 13, 34510 Received 6th November 2023 Accepted 17th November 2023 DOI: 10.1039/d3ra07567b rsc.li/rsc-advances 34510 | RSC Adv., 2023, 13, 3451034519 © 2023 The Author(s). Published by the Royal Society of Chemistry RSC Advances PAPER Open Access Article. Published on 24 November 2023. Downloaded on 11/26/2023 11:27:32 PM. This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence. View Article Online View Journal | View Issue