Vol.:(0123456789) Discover Nano (2023) 18:140 | https://doi.org/10.1186/s11671-023-03920-7 1 3 Discover Nano Research Dynamical characteristics of AC‑driven hybrid WSe 2 monolayer/ AlGaInP quantum wells light‑emitting device James Singh Konthoujam 1  · Yen‑Shou Lin 1,2  · Ya‑Hui Chang 1,2  · Hsiang‑Ting Lin 1  · Chiao‑Yun Chang 1  · Yu‑Wei Zhang 1,3  · Shih‑Yen Lin 1,3  · Hao‑Chung Kuo 1,2  · Min‑Hsiung Shih 1,2,4 Received: 9 August 2023 / Accepted: 30 October 2023 © The Author(s) 2023 OPEN Abstract The exploration of functional light-emitting devices and numerous optoelectronic applications can be accomplished on an elegant platform provided by rapidly developing transition metal dichalcogenides (TMDCs). However, TMDCs-based light emitting devices encounter certain serious difculties, such as high resistance losses from ohmic contacts or the need for complex heterostructures, which restricts the device applications. Despite the fact that AC-driven light emitting devices have developed ways to overcome these challenges, there is still a signifcant demand for multiple wavelength emission from a single device, which is necessary for full color light emitting devices. Here, we developed a dual-color AC-driven light-emitting device by integrating the WSe 2 monolayer and AlGaInP–GaInP multiple quantum well (MQW) structures in the form of capacitor structure using AlOx insulating layer between the two emitters. In order to comprehend the characteristics of the hybrid device under various driving circumstances, we investigate the frequency-dependent EL intensity of the hybrid device using an equivalent RC circuit model. The time-resolved electroluminescence (TREL) characteristics of the hybrid device were analyzed in details to elucidate the underlying physical mechanisms governing its performance under varying applied frequencies. This dual-color hybrid light-emitting device enables the use of 2-D TMDC-based light emitters in a wider range of applications, including broad-band LEDs, quantum display systems, and chip-scale optoelectronic integrated systems. Introduction Monolayer transition metal dichalcogenides (TMDCs) are a class of direct bandgap two-dimensional (2D) semiconduct- ing materials that show considerable potential for next-generation optoelectronic devices such as light emitting diodes (LEDs) and photodetectors [1–9]. Because high quantum efciency may be achieved by utilizing direct band gap material as the emitter, their special properties, such as layer dependent bandgap and large exciton binding energy, make them a promising contender for light emitting applications. The absence of surface dangling bonds in TMDC atomic layers enables its integration with a three-dimensional (3D) bulk material to produce 2D/3D heterojunction devices, which will be crucial for various optoelectronic applications [10–13]. TMDC-based light emitting devices have been demon- strated in a variety of architectures, as either p-n junctions or capacitors depending on the driving source [5, 14–18]. LEDs based on TMDCs have demonstrated remarkable electroluminescence (EL) quantum efciencies in the past few * Min-Hsiung Shih, mhshih@gate.sinica.edu.tw | 1 Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei 11529, Taiwan. 2 Department of Photonics and Institute of Electro-Optical Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan. 3 Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan. 4 Department of Photonics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan.