Surface processing by gas cluster ion beams at the atomic (molecular) level I. Yamada, J. Matsuo, Z. Insepov, D. Takeuchi, M. Akizuki, and N. Toyoda Citation: Journal of Vacuum Science & Technology A 14, 781 (1996); doi: 10.1116/1.580389 View online: http://dx.doi.org/10.1116/1.580389 View Table of Contents: http://scitation.aip.org/content/avs/journal/jvsta/14/3?ver=pdfcov Published by the AVS: Science & Technology of Materials, Interfaces, and Processing Articles you may be interested in Generation of a fast atomicoxygen beam from O− ions by resonant cavity radiation Rev. Sci. Instrum. 67, 1478 (1996); 10.1063/1.1146878 Fragmentation process of sizeselected aluminum cluster anions in collision with a silicon surface J. Chem. Phys. 104, 1387 (1996); 10.1063/1.470905 Ionsurface collisions at grazing incidence: Atomic collisions under special conditions AIP Conf. Proc. 295, 751 (1993); 10.1063/1.45244 Surface processes in the production of negative hydrogen ions AIP Conf. Proc. 210, 3 (1990); 10.1063/1.39617 Surface production of negative hydrogen ions by reflection of hydrogen atoms from cesium oxide surfaces AIP Conf. Proc. 210, 30 (1990); 10.1063/1.39602 Redistribution subject to AVS license or copyright; see http://scitation.aip.org/termsconditions. Download to IP: 130.238.7.43 On: Mon, 17 Nov 2014 12:21:13