https://iaeme.com/Home/journal/IJARET 1 editor@iaeme.com International Journal of Advanced Research in Engineering and Technology (IJARET) Volume 15, Issue 02, March-April, 2024, pp. 1-11, Article ID: IJARET_15_02_001 Available online at https://iaeme.com/Home/issue/IJARET?Volume=15&Issue=2 ISSN Print: 0976-6480 and ISSN Online: 0976-6499 Impact Factor (2024): 11.76 (Based on Google Scholar Citation) © IAEME Publication ANALYSIS OF ELECTRONIC AND TRANSPORT PROPERTIES OF UNSULLIED AND PHOSPHOROUS DOPED GRAPHENE BASED DEVICE Deep Kamal Kaur Randhawa Department of Engineering and Technology, Guru Nanak Dev University, Regional Campus, Jalandhar, Punjab, India ABSTRACT Graphene is a novel nanomaterial that possesses typical properties of high strength, mobility, and high aspect ratio. Many investigations have been carried out to attempt to distinguish the electronic and transport effect through them mainly in electronic devices. Thus these studies lead to the formation of a new potential candidate derived from graphene which is graphene nanoribbon based devices. Therefore in this paper, we tried to differentiate between doped and undoped graphene-based device. For analyzing electronic and transport properties we tend to applied totally different voltages (0.4, 0.2, 0,-0.2,-0.4) on the metallic region of the device for both the structures (doped and undoped) and have chosen phosphorous as a dopant. Keywords: Graphene, Unsullied device, Doped device, Bandstructure, DDOS, Transmission spectrum, I-V Characteristics Cite this Article: Deep Kamal Kaur Randhawa, Analysis of Electronic and Transport Properties of Unsullied and Phosphorous Doped Graphene Based Device, International Journal of Advanced Research in Engineering and Technology (IJARET), 15(2), 2024, pp. 1-11. https://iaeme.com/Home/issue/IJARET?Volume=15&Issue=2 1. INTRODUCTION In The modern era, semiconductor business is defined by its miniaturization of the product as demand is increasing. There are myriads of trends that developed today’s semiconductor business on large scale. The outstanding technological progress has been obtained from an obsolete plan of reductions in the size of transistors as given by Moore law, thereby increasing the quantity of transistors potential per chip [1]. Revolution of graphene started in 2004 when scientist’s observed that they had prepared graphene from the two dimensional one atom thick sheets of carbon atoms arranged in honeycomb lattice [2, 3].