Politecnico di Torino Porto Institutional Repository [Article] Exciton formation and relaxation in GaAs epilayers Original Citation: Gurioli M.; Borri P.; Colocci M.; Gulia M.; Rossi F.; Molinari E.; Selbmann Pe.; Lugli P. (1998). Exciton formation and relaxation in GaAs epilayers. In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, vol. 58 n. 20, pp. 13403-13406. - ISSN 1098-0121 Availability: This version is available at : http://porto.polito.it/2498483/ since: July 2012 Publisher: APS Published version: DOI:10.1103/PhysRevB.58.R13403 Terms of use: This article is made available under terms and conditions applicable to Open Access Policy Article ("Public - All rights reserved") , as described at http://porto.polito.it/terms_and_conditions. html Porto, the institutional repository of the Politecnico di Torino, is provided by the University Library and the IT-Services. The aim is to enable open access to all the world. Please share with us how this access beneļ¬ts you. Your story matters. (Article begins on next page)