PHYSICAL REVIEW B 98, 039905(E) (2018)
Erratum: First-principles study of pyroelectricity in GaN and ZnO
[Phys. Rev. B 93, 081205(R) (2016)]
Jian Liu, P. B. Allen, and M. Fernández-Serra
(Received 11 July 2018; published 27 July 2018)
DOI: 10.1103/PhysRevB.98.039905
There was an error in Fig. 3 of this paper. The experimental
temperature-dependent lattice parameters [1] a (T ) and c (T )
for ZnO were mistranscribed. This caused a significant error in
the curve of u
ext
. The error was not made when the derivative
was plotted in Fig. 2. The results in Fig. 2 are correct, and the
corrected version of Fig. 3 is given here. We also take this
opportunity to add the predicted u(T ) for GaN, which was
omitted from the original paper (the derivatives are shown in
Fig. 1 of the original paper). We also wish to clarify some
notations which were only implicit via the text but not included
explicitly in the equations. The clarified version of Eq. (5) is
p
β
ǫ
(T ) =
e
j,κα
Z
βα
ǫ
∂u
κα
(
0j )
∂T
ǫ
,
FIG. 1. Corrected version of Fig. 3: Thermal shift of the ZnO
internal parameter u. The measured zero temperature value is 0.382
[2,3], close to the “ideal” value of 3/8. Experimental values are from
Ref. [4]. The notation u
int
refers to the computed value at constant
external strain ǫ [Eq. (7)], and u
ext
refers to the external strain-
induced effect [last two terms in Eq. (8)].
and the wurtzite version, two lines below in the text, should
read p
ǫ
(T ) = (2e/)Z
∗
c (∂u/∂T )
ǫ
. Equation (7) is written
for u/u, but, as the text explains, it is really (u)
ǫ
/u. The
Grüneisen parameter γ
qj
(0) used in that equation is identified
correctly in the text as the “internal” Grüneisen parameter,
defined in Eq. (A14). The second term in Eq. (8) is the internal
shift [it should have been written as u
int
(T ) − u
int
(0)], and
the last two terms are the external shift [caused by external
strains ǫ (T )]. Finally, recent work has clarified and extended
some of this paper. A more thorough discussion on the relation
between external and internal thermal expansions can be found
in Ref. [5]. New measurements of p(T ) are now available for
GaN [6]. The electron-phonon contribution, omitted in this
paper, has now been computed [7] and is not negligible for
ZnO or GaN.
FIG. 2. Thermal shift of the GaN internal parameter u. The
derivatives du/dT were given in the original paper as Fig. 1. The
notations u
int
and u
ext
are explained in Fig. 1.
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2469-9950/2018/98(3)/039905(1) 039905-1 ©2018 American Physical Society