Accepted Manuscript Design and Analysis of 30 nm T-Gate InAlN/GaN HEMT with AlGaN back-barrier for High power Microwave Applications P. Murugapandiyan, S. Ravimaran, J. William, K. Meenakshi Sundaram PII: S0749-6036(17)31545-8 DOI: 10.1016/j.spmi.2017.08.002 Reference: YSPMI 5177 To appear in: Superlattices and Microstructures Received Date: 25 June 2017 Revised Date: 01 August 2017 Accepted Date: 02 August 2017 Please cite this article as: P. Murugapandiyan, S. Ravimaran, J. William, K. Meenakshi Sundaram, Design and Analysis of 30 nm T-Gate InAlN/GaN HEMT with AlGaN back-barrier for High power Microwave Applications, (2017), doi: 10.1016/j.spmi.2017.08.002 Superlattices and Microstructures This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain.