Journal Pre-proofs Comparative Study on Performance of AlGaN/GaN MS-HEMTs with SiN x , SiO x , and SiNO Surface Passivation Kai-Yuan Cheng, Shang-Chi Wu, Chia-Jui Yu, Tong-Wen Wang, Jyun-Hao Liao, Meng-Chyi Wu PII: S0038-1101(20)30107-6 DOI: https://doi.org/10.1016/j.sse.2020.107824 Reference: SSE 107824 To appear in: Solid-State Electronics Received Date: 6 March 2020 Revised Date: 14 April 2020 Accepted Date: 19 April 2020 Please cite this article as: Cheng, K-Y., Wu, S-C., Yu, C-J., Wang, T-W., Liao, J-H., Wu, M-C., Comparative Study on Performance of AlGaN/GaN MS-HEMTs with SiN x , SiO x , and SiNO Surface Passivation, Solid-State Electronics (2020), doi: https://doi.org/10.1016/j.sse.2020.107824 This is a PDF file of an article that has undergone enhancements after acceptance, such as the addition of a cover page and metadata, and formatting for readability, but it is not yet the definitive version of record. This version will undergo additional copyediting, typesetting and review before it is published in its final form, but we are providing this version to give early visibility of the article. Please note that, during the production process, errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. © 2020 Published by Elsevier Ltd.