Doping of Sub-50nm SOI Layers Bartek J. Pawlak 1 , Ray Duffy 1 , Mark van Dal 1 , Frans Voogt 2 , Robbert Weemaes 3 , Fred Roozeboom 4 , Peer Zalm 3 , Nick Bennett 5 , and Nick Cowern 5 1 NXP-TSMC Research Center, Kapeldreef 75, Leuven, 3001, Belgium 2 NXP Semiconductors, Nijmegen, Netherlands 3 Philips, Eindhoven, Netherlands 4 NXP Semiconductors, Eindhoven, Netherlands 5 University of Newcastle, Newcastle, United Kingdom ABSTRACT Doping of thin body Si becomes very essential topic due to increasing interest of forming source/drain regions in fully depleted planar silicon-on-isolator (SOI) devices or vertical Fin field-effect-transistors (FinFETs). To diminish the role of the short-channel- effect (SCE) control, the Si layers thicknesses target the 10 nm range. In this paper many aspects of thin Si body doping are discussed: dopant retention, implantation-related amorphization, thin body recrystallization, sheet resistance (R s ) and carrier mobility in crystalline or amorphized material, impact of the annealing ambient on R s for various SOI thicknesses. The complexity of 3D geometry for vertical Fin and the vicinity of the extended surface have an impact on doping strategies that are significantly different than for planar bulk devices. INTRODUCTION Understanding of dopant behavior in thin body Si is crucial for Fin source and drain formation. BOX Si substrate As or B implantation Fin tilt C-Si or A-Si SOI Figure 1. Schematic drawings of implants into Fin (a) when source and drain is formed and of the experiment on implants into crystalline or amorphous SOI blanket wafer. (b) The tilt angle as indicated is consistent with Fin doping geometry. The a-Si layer mimics the full Fin amorphizing implant condition. a b BOX FIN Fin tilt Mater. Res. Soc. Symp. Proc. Vol. 1070 © 2008 Materials Research Society 1070-E04-06