Author’s Accepted Manuscript Influence of rapid thermal annealing at varied temperatures on conductivity activation energy and structural properties of Si-doped β-Ga 2 O 3 film grown by pulsed laser deposition Iwan Dwi Antoro, Satoshi Itoh, Satoru Yamada, Takeshi Kawae PII: S0272-8842(18)32704-4 DOI: https://doi.org/10.1016/j.ceramint.2018.09.240 Reference: CERI19639 To appear in: Ceramics International Received date: 10 April 2018 Revised date: 15 September 2018 Accepted date: 23 September 2018 Cite this article as: Iwan Dwi Antoro, Satoshi Itoh, Satoru Yamada and Takeshi Kawae, Influence of rapid thermal annealing at varied temperatures on conductivity activation energy and structural properties of Si-doped β-Ga 2 O 3 film grown by pulsed laser deposition, Ceramics International, https://doi.org/10.1016/j.ceramint.2018.09.240 This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting galley proof before it is published in its final citable form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. www.elsevier.com/locate/ceri