ORIGINAL PAPER Design of Dual-Gate P-type IMOS Based Industrial Purpose Pressure Sensor Leo Raj Solay 1 & Sarabdeep Singh 2 & Naveen Kumar 2 & S. Intekhab Amin 3 & Sunny Anand 1 Received: 4 August 2020 /Accepted: 14 October 2020 # Springer Nature B.V. 2020 Abstract In this treatise, we have proposed a Single Material Gate–Dual Gate Impact Ionization Metal Oxide Semiconductor (SMG DG- IMOS) based Pressure Sensor. The pressure sensor has the most notable role in both the electrical and mechanical emerging fields. This article grants the outline and scrutiny of pressure sensors on SMG-DG IMOS technology. The proposed device uncovers the hypothetical and practical concepts that can be effective for the future pressure sensor. Different ranges of bending: Low, Medium and High, have been employed to the proposed pressure sensor device. Several performance parameters under the ranges of bending have been investigated. The device structure has been developed with SiO 2 as the gate oxide, a gate metal with work function 4.26 eV and a gate length of 130 nm while proposing the IMOS based pressure sensor design. The proposed sensor design is then investigated for different metals to explore the compatibility of the IMOS structure for different ranges of bending. The optimization of the proposed IMOS based pressure sensor has been carried out for broad sensing range and better sensitivity. Keywords Single material gate (SMG) . Dual gate (DG) . Impact Ionization MOS . Pressure Sensor . Micro electro-mechanical systems (MEMS) 1 Introduction From the past decade, Micro Electro Mechanical Systems (MEMS) technology wheedled many innovations particularly in the field of miniaturized sensors and actuators. There are many pressure sensors available in recent times. The efficien- cy of the pressure sensor to sense, analyse, compute and con- trol has turned into a trademark innovation of the modern era [1]. From the past times, there have been many improvements in Micro Electro Mechanical Systems (MEMS) technology like fabrication of suspended structures that bend under pres- sure variation [2, 3]. The process of the pressure sensor is carried out by two major techniques namely, bulk micromachining and surface micromachining. Thin mem- branes are fabricated by bulk micromachining process where- as surface micromachining uses the deposition of the sacrificial layer to fabricate suspended structures [4, 5]. Adaption of pressure sensors upon the devices has been wide- ly used in many areas for various purposes starting from the automotive industry [6, 7] to biomedical applications [8, 9]. An important aspect of MEMS-based devices in mechanical structures merged with motion and the electrical signal. The MEMS pressure sensor is classified into capacitive and piezoresistive in terms of measurement criteria [10]. The MEMS-based devices have perceived the sensing of capaci- tance variation and resistance change respectively. Piezoresistive pressure sensors are widely studied as it has a financial gain because of its high yielding capacity and wider dynamic range [11]. The mechanical strain applied on any device and the variation in the mechanical structure parameter of any device resulted in an enhancement in terms of pressure and processing. Piezo resistors sensing elements are generally used in pressure sensors as they have better CMOS compati- bility in microsystems [12]. Unfortunately, the piezoresistive sensing elements cannot sense the low-pressure biomedical measurements due to the low sensitivity and high noise [13, 14]. Diaphragm based pressure sensors are widely used for enormous applications such as aerospace, automotive and bio- medical fields [15]. The bending of the diaphragm is caused * Sarabdeep Singh sarabdeep1611@gmail.com 1 Amity University, Noida, UP, India 2 National Institute of Technology, Jalandhar, Punjab, India 3 Jamia Milia Islamia Technological University, Delhi, India Silicon https://doi.org/10.1007/s12633-020-00785-8