Indian Journal of Pure & Applied Physics Vol. 45, January 2007, pp. 96-99 Phonon interaction and variation of deformation potential with temperature and concentration in diluted Ga (1-x) Mn x N quantum well Ankur Pandya & Prafulla K Jha Computational Condensed Matter Physics Laboratory, Department of Physics, Faculty of Science The M S University of Baroda, Vadodara 390 002 Received 1March 2006; accepted 19 September 2006 The carrier transport properties for two dimensional diluted Ga (1-x) Mn x N have been calculated via electron acoustical phonon interaction on the basis of deformation potential coupling mechanism for the different concentrations of Mn (x ≤10%) at different temperatures. The acoustic phonon scattering rate increases with the energy and decreases with the manganese concentration. The contribution of acoustic phonons in the variation of resistivity for different manganese concentrations and threshold thermal energy have also been determined. The temperature and concentration both affect the acoustic phonon scattering rate. Therefore, the resistivity varies due to the effect of these on the acoustical deformation potential (ADP). Keywords: Phonons interaction, Diluted magnetic semiconductor IPC Code: G10K11/00 1 Introduction In recent years, manganese doped III-V ferromagnetic semiconductors like Ga (1-x) Mn x N and Ga (1-x) Mn x As known as diluted magnetic semiconductors (DMS) have attracted great attention as a potential application for spintronics due to their successful demonstration of spin injection into the semiconductor devices. By using semiconductor Ga (1- x) Mn x N (x ≤0.1) of high crystal quality, with its T c beyond room temperature, some magnetic, electronic and photonic devices including spin transistors operating at very low power, mobile applications, optical emitters with encoded emitters with encoded information through their polarized light output, and Magnetic Random Access Memory 1,2 (MRAM) will be convenient to make. The transport properties of bulk materials and two dimensional structures are of great importance in materials’ assessment particularly in developing and optimizing new device structures and highly affected by the phonon scattering, which is inherent to the solid state of matter. The electron mobility is influenced strongly by the interaction of electrons with phonons. The saturation velocity of carriers in a semiconductor provides the speed of a microelectronic device fabricated from this semiconductor 3 . Evidently, the practical switching time of such a microelectronic device will be limited by the saturation velocity and clearly therefore, the phonons play major role in the fundamental practical applications and limits of such microelectronic devices. The dynamics of carrier capture in the active quantum well region of a polar semiconductor quantum well laser also introduces the importance of carrier–phonon interactions in modern semiconductor devices. It is observed that the loss of energy by an electron depends on the rates for both phonon absorption and phonon emission. Further, it is observed that the dimensional confinement of phonons in inter-sub-band semiconductor lasers changes the laser gain and leads to enhanced population inversion in some asymmetric double barrier quantum well lasers 4 . The dimensional confinement of phonons restricts the phase space of phonon wavevector and hence, the carrier phonon interactions in nanostructures are modified by the phonon confinement. In the present work, the electron-acoustic phonon scattering rate in two- dimensional Ga (1-x) Mn x N alloy by using the deformation potential coupling mechanism has been calculated. The deformation potential coupling between electrons and phonons has been utilized quite successfully previously in the case of bulk as well as semiconductor nanostructure to calculate acoustic- phonon scattering rate 4,5 .