Author’s Accepted Manuscript Surface interaction of H 2 S, SO 2 , and SO 3 on fullerene-like gallium nitride (GaN) nanostructure semiconductor M. Salimifard, A. Shokuhi Rad, K. Mahanpoor PII: S0038-1098(17)30234-X DOI: http://dx.doi.org/10.1016/j.ssc.2017.07.018 Reference: SSC13241 To appear in: Solid State Communications Received date: 1 April 2017 Revised date: 22 July 2017 Accepted date: 27 July 2017 Cite this article as: M. Salimifard, A. Shokuhi Rad and K. Mahanpoor, Surface interaction of H 2 S, SO 2 , and SO 3 on fullerene-like gallium nitride (GaN nanostructure semiconductor, Solid State Communications http://dx.doi.org/10.1016/j.ssc.2017.07.018 This is a PDF file of an unedited manuscript that has been accepted fo publication. As a service to our customers we are providing this early version o the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting galley proof before it is published in its final citable form Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain www.elsevier.com/locate/ssc