IOP PUBLISHING NANOTECHNOLOGY
Nanotechnology 20 (2009) 235307 (10pp) doi:10.1088/0957-4484/20/23/235307
Directional growth of metallic and
polymeric nanowires
Prem S Thapa
1,3
, Bruce J Ackerson
1
, Daniel R Grischkowsky
2
and
Bret N Flanders
1,3,4
1
Department of Physics, Oklahoma State University, Stillwater, OK 74078-3072, USA
2
School of Electrical and Computer Engineering, Oklahoma State University, Stillwater,
OK 74078, USA
E-mail: bret.flanders@phys.ksu.edu
Received 3 February 2009, in final form 26 March 2009
Published 18 May 2009
Online at stacks.iop.org/Nano/20/235307
Abstract
This work delineates the mechanism by which directional nanowire growth occurs in the
directed electrochemical nanowire assembly (DENA) technique for growing nanowires on
micro-electrode arrays. Indium, polythiophene, and polypyrrole nanowires are the subjects of
this study. This technique allows the user to specify the growth path without the use of a
mechanical template. Nanowire growth from a user-selected electrode to within ±3 μm of the
straight line path to a second electrode lying within a ∼140
◦
angular range and a ∼100 μm
radius of the selected electrode is demonstrated. Theory for one-dimensional electrochemical
diffusion in the inter-electrode region reveals that screening of the applied voltage is
incomplete, allowing a long range voltage component to extend from the biased to the grounded
electrode. Numerical analysis of two-dimensional multi-electrode arrays shows that a linear
ridge of electric field maxima bridges the gap between selected electrodes but decays in all
other directions. The presence of this anisotropic, long range voltage defines the wire growth
path and suppresses the inherent tip splitting tendency of amorphous polymeric materials. This
technology allows polythiophene and polypyrrole to be grown as wires rather than fractal
aggregates or films, establishing DENA as an on-chip approach to both crystalline metallic and
amorphous polymeric nanowire growth.
1. Introduction
Precise nanowire growth techniques are vital to nanoelectron-
ics-development. One seeks control over the wire composition,
dimensions, and growth direction in a single approach. This
has been an elusive goal. Templated growth is in broad-use as
the wire-compositions can be metallic [1], semiconductor, or
polymeric [2, 3]. The wire-shapes are reproducible [4], and
the output is scalable. However, prefabrication of mechanical
growth channels and post-growth release of the wires are
typically required. Methods for circumventing these laborious
steps are, therefore, sought. Dielectrophoretic assembly is a
template-free approach that uses a voltage to chain metallic
or semiconductor particles into wires in the gaps between
electrodes [5–9], but these nanoparticulate materials suffer
3
Present address: Department of Physics, Kansas State University,
Manhattan, KS 66506-2601, USA.
4
Author to whom any correspondence should be addressed.
from resistivities several orders of magnitude in excess of bulk
metals [6, 9]. The vapor–liquid–solid (VLS) technique does
not require growth channels and produces single crystalline
wires in high yield [10, 11]. VLS is especially useful for
semiconductor–nanowire assembly. However, this approach
can only fabricate crystalline materials. Conducting polymeric
nanowires are amorphous materials that are needed for basic
transport studies [12, 13] and sensor-applications [14, 15] and
are also promising electrophysiological materials [16, 17].
The wire-lengths that are attainable in most approaches to
polymeric wire growth are limited to 10 μm or less [14, 18].
Dip-pen lithography relaxes the wire-length constraint [19],
but is restricted to applications where the use of a scanning
probe is feasible. In response to the need for precise nanowire
growth techniques, the present work delineates methodology
for the directional growth of both crystalline metallic wires and
amorphous polymeric wires between user-selected sites in on-
chip circuitry. A letter reporting the basic capabilities of this
methodology has been published elsewhere [20].
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