This content has been downloaded from IOPscience. Please scroll down to see the full text. Download details: IP Address: 207.162.240.147 This content was downloaded on 10/07/2017 at 13:21 Please note that terms and conditions apply. Surface passivation investigation on ultra-thin atomic layer deposited aluminum oxide layers for their potential application to form tunnel layer passivated contacts View the table of contents for this issue, or go to the journal homepage for more 2017 Jpn. J. Appl. Phys. 56 08MB14 (http://iopscience.iop.org/1347-4065/56/8S2/08MB14) Home Search Collections Journals About Contact us My IOPscience You may also be interested in: Comparison and characterization of different tunnel layers, suitable for passivated contact formation Zhi Peng Ling, Zheng Xin, Cangming Ke et al. Excellent c-Si surface passivation by thermal atomic layer deposited aluminum oxide after industrial firing activation B Liao, R Stangl, F Ma et al. Decoupling high surface recombination velocity and epitaxial growth for silicon passivation layers on crystalline silicon Kees Landheer, Monja Kaiser, Marcel A Verheijen et al. Surface passivation and antireflectance performances for atomic-layer-deposited Al2O3 films Li Qiang Zhu, Hui Xiao and Yang Hui Liu Significant Improvement of Passivation Performance by Two-Step Preparation of Amorphous Silicon Passivation Layers in Silicon Heterojunction Solar Cells Yue Zhang, Cao Yu, Miao Yang et al. Mist chemical vapor deposition of aluminum oxide thin films for rear surface passivation of crystalline silicon solar cells Takayuki Uchida, Toshiyuki Kawaharamura, Kenji Shibayama et al.