Journal Pre-proofs Full Length Article p-type doping of Ge by Al ion implantation and pulsed laser melting R. Milazzo, M. Linser, G. Impellizzeri, D. Scarpa, M. Giarola, A. Sanson, G. Mariotto, A. Andrighetto, A. Carnera, E. Napolitani PII: S0169-4332(19)34047-4 DOI: https://doi.org/10.1016/j.apsusc.2019.145230 Reference: APSUSC 145230 To appear in: Applied Surface Science Received Date: 13 September 2019 Revised Date: 18 December 2019 Accepted Date: 29 December 2019 Please cite this article as: R. Milazzo, M. Linser, G. Impellizzeri, D. Scarpa, M. Giarola, A. Sanson, G. Mariotto, A. Andrighetto, A. Carnera, E. Napolitani, p-type doping of Ge by Al ion implantation and pulsed laser melting, Applied Surface Science (2019), doi: https://doi.org/10.1016/j.apsusc.2019.145230 This is a PDF file of an article that has undergone enhancements after acceptance, such as the addition of a cover page and metadata, and formatting for readability, but it is not yet the definitive version of record. This version will undergo additional copyediting, typesetting and review before it is published in its final form, but we are providing this version to give early visibility of the article. Please note that, during the production process, errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. © 2019 Published by Elsevier B.V.