ISSN 10274510, Journal of Surface Investigation. Xray, Synchrotron and Neutron Techniques, 2015, Vol. 9, No. 3, pp. 612–615. © Pleiades Publishing, Ltd., 2015. Original Russian Text © B.E. Egamberdiev, N.T. Rustamov, A.S. Mallaev, A.M. Norov, 2015, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, 2015, No. 6, pp. 69–73. 612 INTRODUCTION Ion implantation is one of the most effective ways of affecting the state and properties of solids. In con trast to the doping of silicon with foreign atoms with moderate (tens and hundreds of keV) energies in low (up to 10 13 cm –2 ) doses, which allows the control of some properties of silicon, the implantation of high energy (up to 50 keV) ions in high (10 15 –10 17 cm –2 ) doses makes it possible to form surface layers with impurityatom concentrations similar to the Siatom concentration or even higher. In other words, low energy ion implantation can be a powerful tool for synthesizing novel thinfilm materials with modified properties. However, to successfully use this tech nique, it is necessary to understand various processes that occur in a solid during ion implantation at the electronic and atomic levels. The implantation of ions with different energies in different doses can significantly modify the composi tion, structure, and properties of semiconductors. In this respect, silicon single crystals doped with Ni, Fe, and Co ions with energies of E = 20–50 keV are of spe cial interest, since, even at low irradiation doses (D ≤ 10 15 cm –2 ), they can form electrically active centers in high concentrations, which cannot be obtained by thermal diffusion; at high ion doses, metal silicides with new physical properties are formed [1, 2]. In par ticular, CoSi 2 and NiSi 2 silicide films have the cubic lattice and very low resistivity (ρ = 30–50 μΩ cm), which make them promising for application in micro wave metal and permeablebase transistors. However, such films are currently synthesized by molecular beam and solidstate epitaxy. The fabrication of buried conductive Ni, Fe, and Co silicide films by ion implantation and investigation of their physicochemi cal and electrical properties are still in an early stage of development. The urgency of this study is associated with some unsolved problems concerning both the epitaxial growth technique and understanding the physical aspects of the growth and effect of the structure on the physical properties of silicide films, which offer new opportunities for the creation of devices with unique capabilities. The further development of microelectronics requires new extraordinary materials, which would ensure enhanced chip complexity and the improve ment of functional electronic devices. In terms of this, silicides have the greatest potential for application. The aim of this study is to investigate the effect of annealing on the crystal structure of the surface of sil icon doped with Ni, Fe, and Co ions. EXPERIMENTAL We investigated concentration profiles for Ni, Fe, and Co atoms with an energy of E 0 = 40 keV implanted in silicon at irradiation doses of 10 15 –10 17 ion/cm 2 . The initial material was KDB silicon with a resistivity of ρ = 10 Ω cm. The experimental techniques used were secondaryion mass spectrometry, Rutherford backscattering, and electron microscopy. The objects of study were singlecrystal n and pSi ingots doped with boron and phosphorous, respec tively, in concentrations from 10 13 to 10 18 cm –3 . The ingots were grown by the Czochralski technique and floating zone melting. Transition elements, including manganese, iron, cobalt, and nickel, were used as dopants. These impurities were chosen, first of all, o account of the fact that their behavior, as well as the Effect of Annealing on the Crystal Structure of the Surface of Silicon Doped with Ni, Fe, and Co Ions B. E. Egamberdiev, N. T. Rustamov, A. S. Mallaev, and A. M. Norov Tashkent State University, Tashkent, 700095 Uzbekistan email: bahrom_prof@mail.ru Received August 20, 2014 Abstract—Ionimplanted Ni, Fe, and Co layers in silicon are experimentally investigated. It is established that at certain heattreatment conditions and irradiation doses socalled epitaxial silicides form on the single crystal surface, which can work as conductive layers or metal coatings. Keywords: ion implantation, epitaxial silicides, molecular beam epitaxy, secondaryion mass spectrometry, Auger electron spectroscopy DOI: 10.1134/S1027451015030222