Japanese Journal of Applied Physics Facet Formation of Uniform InAs Quantum Dots by Molecular Beam Epitaxy To cite this article: Toshiyuki Kaizu and Koichi Yamaguchi 2003 Jpn. J. Appl. Phys. 42 4166 View the article online for updates and enhancements. Related content Uniform Formation of Two-dimensional and Three-dimensional InAs Islands on GaAs by Molecular Beam Epitaxy Toshiyuki Kaizu and Koichi Yamaguchi - Stranski-Krastanov Growth of InAs Quantum Dots with Narrow Size Distribution Koichi Yamaguchi, Kunihiko Yujobo and Toshiyuki Kaizu - Self Size-Limiting Process of InAs Quantum Dots Grown by Molecular Beam Epitaxy Toshiyuki Kaizu and Koichi Yamaguchi - Recent citations Coarsening process of high-density InAs quantum dots on Sb-irradiated GaAs Naoki Kakuda and Koichi Yamaguchi - Time-Resolved X-ray Diffraction Measurements of High-Density InAs Quantum Dots on Sb/GaAs Layers and the Suppression of Coalescence by Sb- Irradiated Growth Interruption Naoki Kakuda et al - Molecular Beam Epitaxial Growth of GaAs on (631) Oriented Substrates Esteban Cruz-Hernandez et al - This content was downloaded from IP address 207.241.231.81 on 02/05/2019 at 15:55