Available online at www.sciencedirect.com ScienceDirect Materials Today: Proceedings 18 (2019) 806–811 www.materialstoday.com/proceedings 2214-7853© 2019 Elsevier Ltd. All rights reserved. Selection and/or Peer-review under responsibility of International Conference on Nanotechnology: Ideas, Innovations & Initiatives-2017 (ICN:3i- 2017). ICN3I-2017 Effect of mole fraction, doping concentration and gate length on the electrical characteristics of nanoelectronic High Electron Mobility Transistor Sanjib Kalita a , Subhadeep Mukhopadhyay b, * a,b Department of Electronics and Communication Engineering, National Institute of Technology, Yupia, Arunachal Pradesh, India Abstract In this work, we have optimized the device structure to achieve a maximum drain current of Nanoelectronic AlGaN/GaN single- heterojunction high electron mobility transistors (HEMTs) by the variations of mole fraction, doping concentration and gate length, using the SILVACO-ATLAS software tool. The drain current increases at higher aluminium mole fraction of AlGaN nano-layer. The drain current increases at higher doping concentration of AlGaN nano-layer. The drain current reduces at higher gate length of HEMTs. The conduction band engineering in terms of quantum wells is investigated in detail by involving the Bose-Einstein expression. The simulation results of this work are supported by the available previous experimental results and analytical modelling. This work will be useful to fabricate the AlGaN/GaN HEMTs experimentally for bioengineering applications. © 2019 Elsevier Ltd. All rights reserved. Selection and/or Peer-review under responsibility of International Conference on Nanotechnology: Ideas, Innovations & Initiatives-2017 (ICN:3i- 2017). Keywords:Mole fraction; Doping concentration; Gate length; Quantum well. * Corresponding author. Tel.: 0360-2284801; fax: 0360-2284972. E-mail address: subhadeepmukhopadhyay21@gmail.com