Modulation of intersubband infrared absorption under intense terahertz irradiation
A. Hernández-Cabrera* and P. Aceituno
Dpto. Física Básica, Universidad de La Laguna, La Laguna, 38206-Tenerife, Spain
F. T. Vasko
Institute of Semiconductor Physics, NAS Ukraine, Prospekt Nauki 41, Kiev, 03028, Ukraine
Received 5 April 2005; published 6 July 2005
We analyze the modification of the intersubband absorption of electrons in quantum wells under intense THz
irradiation. An expression for the induced current is obtained, based on the adiabatic approach and the resonant
approximation. We predict the occurrence of a significant fine structure as well as the broadening and shift of
the absorption under THz pump in a MW cm
-2
intensity range.
DOI: 10.1103/PhysRevB.72.045307 PACS numbers: 73.63.Hs, 78.45.h, 78.47.p
I. INTRODUCTION
Strong transverse fields have long been known for modi-
fying confined states in quantum wells QWs. The examina-
tion of the interband optical transitions under transverse
fields, both static and high-frequency, is a convenient method
to study these modifications see references in Refs. 1–3 and
Refs. 4 and 5, respectively. The excitonic effect and the
modifications of both electron and hole states under trans-
verse fields have to be taken into account for a quantitative
description of the interband linear response. It is also inter-
esting to study the intersubband response under infrared IR
excitation of electrons between the ground and the excited
conduction band states which are placed in a transverse field.
Whereas the electro-optic modulation of the intersubband
transitions is well investigated,
6
the influence of an intense
THz irradiation on such transitions is not investigated to the
best of our knowledge. In this paper we treat theoretically the
effect of the THz pump on the infrared IR intersubband
absorption.
The confined electron states in a QW, of width d, sub-
jected to a transverse electric field E
cos t, are described
within the adiabatic approach, if
21
, where
21
/ is the
frequency of the intersubband transitions. Since the levels
oscillate with a frequency , the n +1-order intersubband
transitions, with n THz photons and a single IR photon, take
place resulting in a fine structure of the absorption. At the
same time, the shape of the absorption peaks is modified
under the THz irradiation. In addition, one may consider the
THz irradiation as a perturbation if eE
d /2
21
. Other-
wise, a numerical description of the electron states has to be
applied.
The calculations below are based on the one-particle den-
sity matrix equation linearized with respect to the IR field
E
exp-it, while the THz irradiation is taken into ac-
count in the framework of the adiabatic approach. The broad-
ening is described by the phenomenological approach which
takes into account the LO-phonon emission in the spectral
region
LO
, where
LO
is the optical phonon frequency.
We have considered two cases: a symmetric rectangular QW
and a nonsymmetric one. The last case may be realized by
adding a transversal dc electric field E
o
to the symmetric
case, as can be seen in Fig. 1a and 1b, respectively.
The paper is organized as follows. In Sec. II we derive the
relative intersubband absorption under THz pump starting on
the density matrix equation. The case of the perturbative ap-
proach is considered in Sec. III, while the results for the
numerical description are discussed in Sec. IV. Concluding
remarks and a list of assumptions made are given in the last
section.
II. INTERSUBBAND RESPONSE
In this section, we obtain the averaged over the THz pump
period relative absorption of the IR probe. The high-
frequency addendum to the density matrix
t
z , zexp
-it is governed by the linearized equation written in the
coordinate-momentum representation:
pt
z, z
t
+
i
h
ˆ
zt
- h
ˆ
z
t
-
pt
z, z +
i
h
ˆ
z
- h
ˆ
z
pt
z, z
=0 1
with the transverse coordinate z and 2D momentum p. Here
FIG. 1. The band diagrams for symmetric a and nonsymmetric
b QWs under transverse THz irradiation. Dashed lines schemati-
cally show variation of levels and potentials under maximal THz
field.
PHYSICAL REVIEW B 72, 045307 2005
1098-0121/2005/724/0453075/$23.00 ©2005 The American Physical Society 045307-1